Nonvolatile Modulation of Bi2O2Se/Pb(Zr,Ti)O3 Heteroepitaxy
Journal
ACS Applied Materials & Interfaces
Journal Volume
16
Journal Issue
21
Start Page
27523
End Page
27531
ISSN
1944-8244
1944-8252
Date Issued
2024-05-15
Author(s)
Yong-Jyun Wang
Zi-Liang Yang
Jia-Wei Chen
Ruixue Zhu
Sen-Hao Chang
Hong-Yuan Lin
Chun-Liang Lin
Yi-Chun Chen
Chia-Hao Chen
Bo-Chao Huang
Chao-Hui Yeh
Peng Gao
Po-Wen Chiu
Yi-Cheng Chen
Ying-Hao Chu
Abstract
The pursuit of high-performance electronic devices has driven the research focus toward 2D semiconductors with high electron mobility and suitable band gaps. Previous studies have demonstrated that quasi-2D Bi2O2Se (BOSe) has remarkable physical properties and is a promising candidate for further exploration. Building upon this foundation, the present work introduces a novel concept for achieving nonvolatile and reversible control of BOSe’s electronic properties. The approach involves the epitaxial integration of a ferroelectric PbZr0.2Ti0.8O3 (PZT) layer to modify BOSe’s band alignment. Within the BOSe/PZT heteroepitaxy, through two opposite ferroelectric polarization states of the PZT layer, we can tune the Fermi level in the BOSe layer. Consequently, this controlled modulation of the electronic structure provides a pathway to manipulate the electrical properties of the BOSe layer and the corresponding devices.
Subjects
2D semiconductor
Bi2O2Se
electronic potential
ferroelectric
nonvolatile modulation
Publisher
American Chemical Society (ACS)
Type
journal article