Optimization of TSV Array Based on Mathematical Model for HBM3
Part Of
33rd IEEE Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2024
Start Page
1
End Page
3
ISBN (of the container)
979-835035123-1
Date Issued
2024-10-06
Author(s)
Abstract
In this paper, we present a novel approach to optimize the through-silicon vias (TSV) structure by the multi-conductor transmission line (MTL) theory and a genetic algorithm (GA) for high bandwidth memory (HBM). A comprehensive mathematical model is developed for the TSV array based on MTL theory. The S-parameter estimated by the model is consistent with the full-wave simulated results. Moreover, GA, which iteratively adjusts the TSV parameters, is employed to minimize the insertion loss. The results demonstrate significant improvements in TSV performance, including reduced signal degradation and enhanced overall efficiency.
Event(s)
33rd IEEE Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2024
Publisher
IEEE
Type
conference paper