Millimeter-Wave Wideband CMOS Power Amplifier Using Inductive-Compensation Distributed Active Transformer
Journal
IEEE Transactions on Microwave Theory and Techniques
Start Page
1
End Page
12
ISSN
0018-9480
1557-9670
Date Issued
2024
Author(s)
Abstract
This article proposes a millimeter-wave wideband power amplifier (PA) featuring an inductive-compensation distributed active transformer (DAT) fabricated using a 90-nm CMOS process. The DAT is designed with a compact size of 0.004 mm2, aiming for high power-combining efficiency (PCEFF) and wideband performance. The PA achieves a saturated output power ( PSAT) of 20.6 dBm, a maximum power-added efficiency (PAEmax) of 16.7%, and a 21.1 dB small-signal gain at 60 GHz. A flat 19.6 dBm PSAT with PAEmax exceeding 14.6% is demonstrated within the 32–65 GHz frequency range. The PA exhibits a 3-dB gain bandwidth of 35 GHz (31–66 GHz), and the chip area, excluding pads, is only 0.025 mm2. Notably, according to the author’s knowledge, this PA with a 19.6 dBm PSAT showcases the widest large-signal bandwidth with a flat frequency response compared with previously reported 60 GHz CMOS high-output PAs.
SDGs
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Type
journal article