A V-band 4096-QAM Modulator with AM-AM IQ Optimization for IRR Improvement Using 28nm CMOS Process
Part Of
Asia-Pacific Microwave Conference Proceedings, APMC
Start Page
238
End Page
240
ISBN (of the container)
979-835036354-8
Date Issued
2024-11-17
Author(s)
Abstract
This paper proposed a V-band 4096-QAM OFDM modulator with AM-AM IQ Optimization for image rejection ratio (IRR) improvement and zero dc-power consumption fabricated in 28nm CMOS technology. With the technique of IRR optimization, the IRR can be improved over 20 dB than the previous measurement. At RF/LO port, compact passive transformer/balun were implemented to mitigate the metal loss and achieve better conversion gain performance. Also, the LO hybrid utilizes a converted-metal type 90-degree coupler for lowering I/Q imbalance. This modulator possessed a 3-dB conversion gain of -11 dB among 54–67 GHz. The measured IRR can reach greater than 40 dBc from 57–61 GHz and the peak IRR is 57 dBc at 58 GHz.
Event(s)
2024 IEEE Asia-Pacific Microwave Conference, APMC 2024
SDGs
Publisher
IEEE
Type
conference paper