Dielectric-Free Molybdenum Disulfide Transistors with In-Plane Gates
Journal
ACS Applied Materials & Interfaces
Journal Volume
17
Journal Issue
12
Start Page
19020
End Page
19025
ISSN
1944-8244
1944-8252
Date Issued
2025-03-12
Author(s)
Abstract
channel from the influence of the substrate, this dielectric-free in-plane gate transistor has exhibited potential in electronics. The high responsivity of the device under relatively low applied voltages is also promising for weak-light detection.
SDGs
Publisher
American Chemical Society (ACS)
Type
journal article