Uniform and Fatigue-Free Ferroelectric HZO with Record EBD of 6.3MV/cm and Record Final 2Pr of 64μC/cm2 at Record 5E12 Endurance Using Low Lattice Misfit (2.9%) β-W
Part Of
Technical Digest - International Electron Devices Meeting, IEDM
Start Page
1
End Page
4
ISBN (of the container)
979-835036542-9
Date Issued
2024-12-07
Author(s)
Guan-Hua Chen
Yu-Tsung Liao
Zefu Zhao
Yu-Rui Chen
Yun-Wen Chen
Wei-Jen Chen
Wei-Teng Hsu
Hao-Yi Lu
Ming-Chang Liu
Yu-An Chen
Abstract
Highly reliable metal-ferroelectric-metal (MFM) capacitors using -W electrodes are demonstrated for the first time. -W has low lattice misfit (2.9%) with respect to orthorhombic phase (o-phase) HZO. The low lattice misfit favors HZO o-phase formation, and bottom -W/HZO/top -W capacitor reaches high remanent polarization of with high uniformity. The β-W electrode has a flat surface (roughness ~0.5nm) without scavenging oxygen from HZO during annealing, leading to low oxygen vacancy concentration in HZO with corresponding high breakdown field (EBD). MFM using electrodes shows fatigue-free endurance due to negligible dipole pinning. The bottom -W/HZO/top -W capacitor reaches record EBD of 6.3MV/cm with of and record final of at record endurance larger than 5E12 cycles.
Event(s)
2024 IEEE International Electron Devices Meeting, IEDM 2024
Publisher
IEEE
Type
conference paper