Enhanced Photonic Transistor Memory Performance Through Morphology‐Dependent Scattering Effects and Amplified Spontaneous Emission
Journal
Advanced Materials Technologies
ISSN
2365-709X
2365-709X
Date Issued
2025
Author(s)
Shi, Shin‐Hao
Chen, Wei‐Cheng
Hou, Yu‐Cheng
Hsu, Chih‐Wei
Lin, Yan‐Cheng
Kuo, Chi‐Ching
Lin, Ja‐Hon
Chen, Wen‐Chang
Abstract
Recent studies of nanofibers on organic field-effect transistor (OFET) photonic memory devices have gained significant attention due to their versatility and adaptability for achieving high performance. This research explores the integration of amplified spontaneous emission (ASE) from the organic laser dye pyrromethene 597 (PM597) with cellulose acetate (CA) polymer through electrospinning, serving as the floating-gate layer in OFET photonic memory devices. Four fabrication approaches are employed to examine how different morphologies and optical properties affect device performance: mixed composite film, bilayer film, mixed composite fibers, and two-step fibers. The findings indicate that the optimized memory device achieves a uniform morphology, enhanced scattering effects, and a lower ASE threshold of 4.68 ± 0.46 µJ utilizing two-step fibers comprising PM597 and CA. As a result, the device exhibits superior memory characteristics, including a high memory ratio of ≈105, retention exceeding 10 000 s, endurance over 20 cycles, and relatively low illumination energy requirements. By refining fabrication methods to optimize ASE properties and memory performance, this study highlights a positive correlation between ASE and enhanced charge storage efficiency, further improving the device's optical performance and offering valuable insights into the intersection of laser physics and nonvolatile memory, an area with significant yet underexplored potential.
Subjects
amplified spontaneous emission
electrospinning
phototransistor
Publisher
Wiley
Type
journal article