Electron Cloaking in MoS2 for High-Performance Optoelectronics
Journal
Nano Letters
Journal Volume
25
Journal Issue
23
Start Page
9463
End Page
9469
ISSN
1530-6984
1530-6992
Date Issued
2025-05-28
Author(s)
Chen, Yu-Xiang
Lee, Jian-Jhang
Chen, Ding-Rui
Lin, You-Chen
Chin, Hao-Ting
Huang, Xiu-Yu
Chiu, Sheng-Kuei
Ting, Chu-Chi
Hsieh, Ya-Ping
Abstract
Defects in two-dimensional (2D) materials represent both challenges and opportunities to their optoelectronic performance. While defects limit the carrier mobility in transistors through increased charge scattering, they also enhance 2D material functionality in sensors. Electron cloaking, a process that reduces Coulomb scattering via localized electron-defect interactions, has recently been shown to mitigate the performance degradation of bulk semiconductors in the presence of defects. We demonstrate the realization of electron cloaking in 2D materials through the metal decoration of defects. Sulfur vacancies were introduced in MoS2 and selectively decorated with aluminum using atomic layer deposition. Theoretical and experimental characterization demonstrate the suppression of electronic scattering through localized interactions. Optoelectronic measurements reveal a significant improvement in carrier mobility and lifetime, highlighting the effectiveness of the cloaking mechanism. Our findings open a route independently to maximize performance and functionality of optoelectronic devices, which is illustrated by the realization photosensors with unprecedented sensitivity and speed.
Subjects
2D material
Coulomb scattering
defect-limited mobility
electron cloaking
electron−defect interaction
MoS2
vacancies
SDGs
Publisher
American Chemical Society (ACS)
Type
journal article