Switching Behavior of a Heterostructure Based on Periodically Doped Graphene Nanoribbon
Journal
Physical Review Applied
Journal Volume
16
Journal Issue
2
Start Page
024030
ISSN
23317019
Date Issued
2021
Author(s)
Abstract
We theoretically propose a switching device that operates at room temperature. The device is an in-plane heterostructure based on a periodically boron-doped (nitrogen-doped) armchair graphene nanoribbon, which has been experimentally fabricated recently. The calculated I-V curve shows that for a realistic device with interface width longer than 20 nm, nonzero electric current occurs only in the region of bias voltage between -0.22 and 0.28 V, which is beneficial to low-voltage operation. Furthermore, in this case, the electric current is robust against the change of the potential profile in the interface since the metallic impurity-induced sub-bands with delocalized wave functions contribute to the transmission exclusively. This also suggests the high response speed of the proposed device. We also discuss the temperature dependence, the output impedance, the effect of phonons, and the possible regimes to extend our work, which suggest that our model may have potential room-temperature nanoelectronics applications.
Subjects
Doping (additives)
Graphene
Graphene Nanoribbon
Temperature Distribution
Wave Functions
High Response Speed
Low Voltage Operation
Metallic Impurity
Potential Profiles
Realistic Devices
Switching Behaviors
Switching Devices
Temperature Dependence
Nanoribbons
SDGs
Publisher
American Physical Society
Type
journal article