Millimeter-Wave GaAs Ultra-Wideband Medium Power Amplifier and Broadband High-Power Power Amplifier for 5G/6G Applications
Journal
IEEE Journal on Emerging and Selected Topics in Circuits and Systems
Journal Volume
14
Journal Issue
1
Start Page
111
End Page
121
ISSN
2156-3357
2156-3365
Date Issued
2024-03
Author(s)
Abstract
This paper presents an ultra-wideband (UWB) medium power amplifier (MPA) and a broadband high-power power amplifier (HPA) operating at the 5G/6G frequency bands. By using 0.15~\mu \text{m} GaAs pseudomorphic high electron mobility transistor (pHEMT) technology process, the proposed UWB MPA delivers an average small-signal gain of 16.5 dB, a saturation output power (\text{P}_{\mathrm {sat}} ) of 24 dBm, and a peak power-added efficiency (PAE) over 24% from 24 to 38 GHz with a chip area of 2\times1 mm2. The broadband HPA demonstrates a 17-dB average small-signal gain, 29-dBm \text{P}_{\mathrm {sat}} , and a PAE over 28% from 24 to 32 GHz with a 2.4\times1.1 mm2 chip size. The measurement results have demonstrated the great potential of the proposed PA for 5G/6G millimeter-wave applications.
Subjects
5G
6G
broadband
GaAs pHEMT
Power amplifier
ultra-wideband
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Type
journal article