Numerical Analysis of Different Impact Ionization Models in Single-Photon Avalanche Diodes
Journal
Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Start Page
99
End Page
100
ISSN
21583234
ISBN (of the container)
979-833152153-0
ISBN
[9798331521530]
Date Issued
2025-09-14
Author(s)
Abstract
Two impact ionization models are examined within our custom TCAD framework to analyze the intensity and spatial distribution of impact ionization in the SPAD under different bias voltages and compare the breakdown voltage to the experimental results. The goal is to reduce the noise levels and improve the efficiency for quantum key distribution applications.
Event(s)
2025 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2025
Subjects
Impact Ionization
SPAD
TCAD
Publisher
IEEE Computer Society
Type
conference paper