Resistance hysteresis in paramagnetic tungsten nitride (W5N6)
Journal
Applied Physics Letters
Journal Volume
127
Journal Issue
5
Start Page
053103
ISSN
0003-6951
1077-3118
Date Issued
2025-08-04
Author(s)
Lin, Wei-Chen
Chen, Sheng-Zong
Lai, Yong-Cheng
Yeh, Hao-Chen
Chin, Hao-Ting
Wang, Deng-Chi
Shih, Mu-Chen
Chuang, Feng-Chuan
Chuang, Chiashain
Jiang, Pei-hsun
Hsieh, Ya-Ping
Abstract
Two-dimensional (2D) transition metal nitrides (TMNs), which are members of the family of 2D materials, may find practical applications in electronics and optoelectronics because of their superior physical properties. Recently, wafer-scale, single-unit-cell height P62m W5N6, which was difficult to be synthesized in the past, has been grown using a restricted vapor-liquid-solid method. Here, we report experimental evidence for hysteretic magnetoresistance (MR) mediated by temperature in paramagnetic W5N6. Surprisingly, hysteretic MR is weak or even non-existent at millikelvin temperatures where hysteresis is expected to be most pronounced. With increasing temperature, hysteretic behavior becomes the strongest at around 9 K. With further increase in temperature, hysteresis becomes weaker and undetectable at around 26 K. The observed paramagnetism in the Efros-Shklovskii variable range hopping (E-S VRH) regime, where Coulomb interactions are important, provides a paradigm for probing magnetism in 2D TMNs. Importantly, such paramagnetism in TMNs in the E-S VRH regime, which is supported by density functional theory calculations, may find applications in medical imaging, magnetic refrigeration, and magnetic sensing.
Publisher
AIP Publishing
Type
journal article