A novel full-chip afterpulsing evaluation technique for 116 × 160 Ge-on-Si SPAD array
Journal
APL Photonics
Journal Volume
10
Journal Issue
12
ISSN
2378-0967
Date Issued
2025-12-01
Author(s)
Chen, Chi-En
Tu, Hon-Yih
Huang, Shih-Min
Cheng, Pi-Ju
Hsu, Ming-Chieh
Wang, Tzu-Jui
Yeh, Shang-Fu
Yi-Ping Chao, Calvin
Wu, Jau-Yang
Abstract
This Letter presents a novel on-chip afterpulsing characterization method demonstrated using gated-mode short-wave infrared single photon avalanche diode arrays, effectively overcoming the measurement limitations of conventional methods. Through this approach, we first achieve a comprehensive evaluation of the full-chip afterpulsing effect by adjusting the ratio between gated-on time and gated-off time and employing a sampling window technique. Experimentally validated using a room-temperature-operated 160 × 116 Ge-on-Si single photon avalanche diode array, the approach clearly reveals the potential pixel-to-pixel variations in afterpulsing behavior across SWIR single-photon avalanche diode arrays, highlighting the critical importance of full-chip evaluation for designing and optimizing gating period.
Publisher
American Institute of Physics
Type
journal article