Basal Plane Activation of SnS2 Thin-Film by Fluorine Doping for Selective Solar-Driven CO2 Reduction With Enhanced Quantum Efficiency
Journal
Advanced Science
ISSN
2198-3844
2198-3844
Date Issued
2026-01-20
Author(s)
Mamo, Tadios Tesfaye
Qorbani, Mohammad
Hailemariam, Adane Gebresilassie
Raghunath, Putikam
Chu, Che‐Men
Yuan, Wen‐Hsin
Sabbah, Amr
Wang, Yen‐Yu
Chang, Shuo‐Yun
Lin, Ming‐Chang
Woon, Wei‐Yen
Lu, Yu‐Jung
Chen, Kuei‐Hsien
Abstract
Photocatalytic conversion of CO2 into value-added fuels offers a viable approach to combat climate change and address global energy demands. Here, we present a fluorine-doped SnS2 thin film with sulfur vacancy (i.e., SV-SnS2:F), prepared via thermal evaporation, post-sulfurization, and fluorine ion-implantation. Substitution of sulfur with fluorine and sulfur vacancy formation changes the product selectivity from CH4 to CO with about 40-fold enhanced yield and boosted internal quantum efficiency (IQE) of 0.52%. Transient absorption, in situ near-ambient pressure X-ray photoelectron, and in situ Fourier transform infrared spectroscopies, along with first-principles density functional theory calculations, suggest that nearest-neighbor Sn to F serves as an active site and stabilizes the *COOH intermediate. Our findings shed light on how F doping activates the nearby elements and its crucial role in intermediate stabilization toward selectivity change in a heterogeneous photocatalysis process.
Subjects
in situ FTIR
in situ NAP-XPS
ion implantation
photocatalysis
reaction pathway
thin film
Publisher
Wiley
Type
journal article