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  4. Deep Learning-Assisted Field-Effect Transistor for Polychromatic Light Sensing and Recognition
 
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Deep Learning-Assisted Field-Effect Transistor for Polychromatic Light Sensing and Recognition

Journal
IEEE Sensors Journal
Series/Report No.
IEEE Sensors Journal
Start Page
1
ISSN
1530-437X
1558-1748
2379-9153
Date Issued
2026-02-13
Author(s)
Chen, Guan-Ying
Shen, Yu-Zhen
Huang, Kai-Chun
Luo, Zheng-Yu
Lee, Shu-Sheng
Lin, Chih-Ting  
DOI
10.1109/jsen.2026.3662357
URI
https://www.scopus.com/record/display.uri?eid=2-s2.0-105030085987&origin=resultslist
https://scholars.lib.ntu.edu.tw/handle/123456789/736444
Abstract
!CMOS image sensors have been widely utilized for image capture; however, they rely on color filtering and demosaicing algorithms for color reconstruction in each pixel. This single-photodetecter, single-color architecture constrains light utilization and image resolution. In this study, we proposed a deep learning (DL)-assisted field-effect transistor (FET) to decouple mixed light components into their respective wavelengths and intensities simultaneously. Through sequential-bilateral-voltage driving, a single FET generates a series of drain current shifts (DCSs) driven by transient photoelectric effects. Using a convolutional neural network (CNN), the DCS map is decoded into multiple light components. Experiments were conducted with combinations of wavelengths - 635 nm (λred), 510 nm (λgreen), and 450 nm (λblue) - and intensities ranging from 0.1 to 0.9 W/cm². In monochromatic light experiments, the DCS-CNN achieved an average mean squared error (MSE) of 0.0014 and mean absolute error (MAE) of 0.0216, outperforming the baseline flat-DCS multilayer perceptron (MLP) by 86% in MSE and 43% in MAE, respectively. Additionally, our experiments confirmed the robustness of the DCS training method under laser source conditions, with and without 90-degree rotation. In polychromatic light experiments, the proposed DCS-CNN achieved 84.5% accuracy detecting light from 64 distinct combinations. To deepen model understanding, we investigated the impact of transistor operation regions and transient current variation maps on light detection capabilities. Overall, this study demonstrates the potential of the DL-FET architecture for enabling single-shot color sampling in cameras without color filters.
Subjects
CMOS image sensor
field-effect transistor
machine learning
multi-wavelength recognition
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Type
journal article

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