Efficient and Bright All-Vacuum-Deposited Perovskite Light Emitting Diode via Guanidinium Doping and an Ultrathin Lithium Bromide Interfacial Layer
Journal
ACS Energy Letters
Journal Volume
11
Journal Issue
2
Start Page
1983
End Page
1992
ISSN
2380-8195
2380-8195
Date Issued
2026-01-26
Author(s)
Wu, Yu-Jer
Chen, Cheng-Yueh
Chuang, Yung-Tang
Lin, Hao-Cheng
Jan, Pei-En
Chen, Hung-Ming
Tsai, Ping-Hsun
Li, Chun-Hao
Chen, Bo-Han
Chen, Kai
Yang, Shang-Da
Lu, Jin-Wei
Lu, Ming-Yen
Lin, Hao-Wu
Abstract
Perovskite light emitting diodes (PeLEDs) are highly promising for next-generation displays owing to their exceptional emissive properties. However, their complex fabrication, often relying on interleaved solution processing and vacuum deposition, hinders scalable mass production. Here, we present a strategy for high-performance, all-vacuum-deposited PeLEDs. By incorporating vacuum-sublimed nitrogen-containing additives, guanidinium bromide, we effectively suppress intrinsic bulk defects in perovskite films and mitigate nonradiative recombination. Furthermore, an ultrathin, vacuum-deposited alkali metal halide top layer is introduced to heal the defective interface by compensating for the loss of bromide during thermal evaporation and improving crystallinity. Integrating these advanced perovskite films with vacuum-sublimed organic transporting layers resulted in PeLEDs demonstrating a maximum luminance exceeding 164,000 cd/m2 and external quantum efficiencies (EQEs) of 14.83%. Our EQE approaches the current vacuum-device record, while the luminance represents a more than 5-fold improvement over most of the previously reported all-vacuum-deposited devices, highlighting a significant leap toward industrially viable PeLED displays.
Publisher
American Chemical Society (ACS)
Type
journal article