Closed-loop Slew Rate Control of Active Current Source Gate Driver with Digital Implementation for SiC MOSFET
Journal
2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025
Start Page
1-5
ISBN (of the container)
979-833154130-9
Date Issued
2025-12-03
Author(s)
Abstract
This paper proposed an Active Current Source Gate Driver(ACSD) for a Silicon Carbide Metal Oxide Semiconductor (SiC MOSFETs) switching device packaged in TO-247-4L configuration, and mainly control the turn-on Ids slew rate and turn-off Vds slew rate. In our proposed ACSD, output-stage of gate driver using current source with a continuous current path, which helps effectively control the operation region of the output-stage transistor, enabling more precise regulation of the output current source. Additionally, using the digital controller to accurately control the switching device slew rate to the specific control value by iteratively adjusting the magnitude of the driving gate current through close-loop feedback in every switching transient period. Finally, we utilize Boost converter as multi-pulse test circuit to verify the controllability of our proposed gate driver.
Event(s)
17th Annual IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025
Subjects
Active Current Source Gate Driver(ACSD)
electromagnetic interference(EMI)
Silicon Carbide Metal Oxide Semiconductor(SiC MOSFETs)
slew rate control
Publisher
IEEE
Type
conference paper