以結構化金屬薄膜開發矽基紅外光通訊波段偵測器
Other Title
Using Structured Metallic Films to Develop Silicon-based Photodetector working at Telecommunication Wavelengths
Journal
光學工程
Journal Issue
131
Start Page
6
End Page
17
Date Issued
2015-09
Author(s)
Abstract
本文介紹一種利用金屬結構薄膜與矽基材結合所構成之矽基紅外光偵測器，利用此種金屬微奈米結構所產生之表面電漿子衰逝將可進而產生熱電子跨躍金屬與矽基材所形成之蕭特基接面，可作為紅外線偵測之方法，增加了利用矽基半導體材料來偵測通訊波段紅外光的可能性。本文所提出的矽基紅外光偵測器為一種將深溝槽薄金屬週期性陣列結構製作於矽基材上，可利用表面電漿共振現象、共振腔效應充分的收集任一偏振方向入射之紅外光源，再透過大面積的金屬／矽基材接面大幅地接收由金屬所產生的熱電子，以提升整體元件於紅外光波段之光電流輸出。本文所提出之深溝槽薄金屬矽基元件將可於不施加偏壓的情況下，表現出良好的光電轉換能力；此外，此元件不論於強（40 µW µm^(-2)）與弱（1 pW µm^(-2)）功率密度之通訊波長紅外光（1550 nm）照射下，其光電流之輸出皆可具有極佳的線性程度。因此，本文所提出之元件將可突破傳統矽基光偵測器所能偵測之波長極限，可低耗能地於紅外光通訊波段中收集各種偏振方向入射光轉換為電訊號之輸出，並可與成熟之矽半導體製程技術整合用於矽光晶片之相關應用上。
In this study, we describe metallic structures on Si substrates that caused the hot carriers arising from surface plasmon decay to generate photocurrent directly for the detection of infrared ray light in optical telecommunication regimes. Herein, we proposed the concept of deep-trench/thin-metal (DTTM) active antenna that take advantage of surface plasmon resonance phenomena, three-dimensional cavity effects, and large-area metal/semiconductor junctions to effectively generate and collect hot electrons arising from plasmon decay and, thereby, increase photocurrent for photodetection well below the semiconductor band edge. The DTTM-based devices exhibited superior photoelectron conversion ability and high degrees of detection linearity under infrared light of both low and high intensity. Therefore, these DTTM-based devices have the attractive properties of high responsivity, extremely low power consumption, and polarization-insensitive detection over a broad bandwidth, suggesting great potential for use in photodetection and on-chip Si photonics in many applications of telecommunication fields.
Subjects
矽基紅外光偵測器
表面電漿共振
共振腔效應
大面積蕭特基接面
偏極化光不敏感偵測
Si-based infrared ray detector
surface plasmon resonance
cavity effects
large-area Schottky junctions
polarization-insensitive photodetection
Type
journal article