https://scholars.lib.ntu.edu.tw/handle/123456789/73878
標題: | Nanoparticle-modified metal-oxide-silicon structure enhancing silicon band-edge electroluminescence to near-lasing action | 作者: | CHING-FUH LIN Chung, Peng-Fei MIIN-JANG CHEN WEI-FANG SU |
公開日期: | 2002 | 卷: | 27 | 期: | 9 | 起(迄)頁: | 713-715 | 來源出版物: | Optics Letters | 摘要: | With the insertion of SiO2 nanoparticles in the oxide layer, near-lasing actions such as threshold behavior and resonance modes are observed at the Si bandgap energy of metal-oxide-silicon (MOS) structure. The threshold current is ∼ 12 mA. The SiO2 nanoparticles cause simultaneous localization of electrons and holes to enhance phonon-assisted radiative recombination. Electrolummescence at Si bandgap energy is increased to orders of magnitude larger than in similar MOS structures without SiO2 nanoparticles. The efficient light emission at the Si bandgap energy indicates that a direct bandgap nature is not necessarily the basic requirement for radiative recombination. © 2002 Optical Society of America. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0036574387&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/300097 http://ntur.lib.ntu.edu.tw/bitstream/246246/93618/1/10.pdf https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036574387&doi=10.1364%2fOL.27.000713&partnerID=40&md5=3df6ea7bd133c916bd1c94ecb5535e85 |
ISSN: | 01469592 | DOI: | 10.1364/OL.27.000713 | SDG/關鍵字: | Electron resonance; Energy gap; Excitons; Light emission; MOS devices; Nanostructured materials; Phonons; Photons; Quantum theory; Scanning electron microscopy; Silica; Silicon wafers; Spectrum analysis; Near-lasing actions; Phonon-assisted radiative recombinations; Electroluminescence |
顯示於: | 材料科學與工程學系 |
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