Highly efficient dual-wavelength InGaN-based light-emitting diodes for a 107% NTSC color gamut display backlight module
Journal
CrystEngComm
Journal Volume
28
Journal Issue
16
Start Page
2640
End Page
2647
ISSN
1466-8033
Date Issued
2026-03-17
Author(s)
Chen, You-Jia
Lee, Hao
Hu, Li-Sheng
Huang, Huai-Chin
Hung, Hsing-Ting
Hsieh, Chuang-Yu
Lu, Tien-Chang
Huang, Chia-Yen
Abstract
In this report, we designed and fabricated an InGaN-based dual-wavelength light-emitting diode (LED) for a wide gamut and energy-efficient backlight module. According to the two-dimensional drift–diffusion charge control simulation model, the green single quantum well should be placed on the n-side of the blue multiple quantum wells in the active region to achieve the specific intensity ratio between the blue and the green peaks at a lower injection current density. The suggested epitaxial structure was grown on a patterned sapphire substrate and fabricated into a horizontal-type LED chip. The bare chip exhibits a wall-plug efficiency of 46% at a current density of 10 A cm−2. After packaging with the dispensed K2SiF6:Mn4+ red phosphor, the color coordinates of the white LED module meet the D65 white point, and a 107% NTSC gamut coverage is achieved with commercial color filters.
Publisher
Royal Society of Chemistry (RSC)
Type
journal article