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  4. Switchable Combination and Internal Resonance in a CMOS-MEMS Resonator with via-Engineered Mass Asymmetry
 
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Switchable Combination and Internal Resonance in a CMOS-MEMS Resonator with via-Engineered Mass Asymmetry

Part Of
Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Start Page
656
End Page
659
ISSN
10846999
ISBN (of the container)
9798331572518
ISBN
9798331572518
Date Issued
2026
Author(s)
Basu, Nilabh
Chen, Ting-Yi
WEI-CHANG LI  
DOI
10.1109/MEMS64181.2026.11419292
URI
https://www.scopus.com/record/display.uri?eid=2-s2.0-105041703932&origin=resultslist
https://scholars.lib.ntu.edu.tw/handle/123456789/739417
Abstract
This work demonstrates, for first time, controlled switching between three-mode combination resonance (CR) and 3:1 internal resonance (IR) within a single CMOS-MEMS resonator. The required additive and integral modal frequency relationships are deterministically engineered by embedding VIA gratings to create a controlled, asymmetric mass distribution, a simple prismatic design that provides superior control over nonlinear modal interactions and offers a distinct advantage over methods requiring complex geometries. Applying a single-tone driving signal near the second resonance mode activates the two dynamic states. By precisely controlling the driving frequency, the nonlinear device toggles between a CR state, which generates dense frequency combs, and an IR state, which produces sparse combs. This work establishes a robust pathway for creating programmable nonlinear landscapes on-chip for advanced sensing and signal processing applications.
Event(s)
39th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2026, 25 January 2026 - 29 January 2026, Salzburg
Subjects
CMOS-MEMS
combination resonance
frequency combs
internal resonance
resonator
Publisher
Institute of Electrical and Electronics Engineers Inc.
Type
conference paper

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