A 2-6 GHz 10 W High-Power GaN Power Amplifier Using Extended Matching Technique
Journal
Asia-Pacific Microwave Conference Proceedings, APMC
Start Page
1
End Page
3
ISBN (of the container)
979-833153455-4
Date Issued
2026-02-18
Author(s)
Abstract
This paper presents a 2-6 GHz broadband high-power amplifier (HPA) with enhanced power density, implemented using the WIN 0.25-μm GaN HEMT process. An extended matching technique is adopted for the interstage and output matching networks, enabling the amplifier to deliver over 10 W of output power across a wide frequency range with a 100% fractional bandwidth. The two-stage PA exhibits a small-signal gain ranging from 13.8 to 21 dB and a saturated output power (Psat) exceeding 40.2 dBm, while achieving a maximum power-added efficiency (PAEmax) above 21% throughout the entire band. Moreover, the core area of the proposed PA occupies only 2.74 × 2.72 mm2, resulting in a power density (mW/mm2) that is highly competitive with prior state-of-the-art designs.
Event(s)
2025 Asia-Pacific Microwave Conference, APMC 2025
Subjects
Broadband
capacitively and inductively coupled resonator
GaN HEMT
high power amplifier
magnetically coupled resonator
power density
Publisher
IEEE
Type
conference paper