A Wideband Bi-Directional Variable-Gain Amplifier with Low Phase Variation for Phased Array System
Journal
2025 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2025 - Proceedings
Start Page
10
End Page
12
ISBN (of the container)
979-833150353-6
Date Issued
2026-02-03
Author(s)
Abstract
This paper presents a wideband bi-directional variable-gain amplifier (VGA) for millimeter-wave (mmW) communication, implemented in 90 nm CMOS technology. The amplifier employs a two-stage differential structure to achieve bidirectional wideband performance with minimal phase variation. In the forward path, the measured 3-dB bandwidth is from 23.13 GHz to 44.69 GHz, with an insertion loss of 1.48 dB. The gain control range (GCR) is 17.3 dB, with a maximum root mean square (RMS) phase variation of 1.73°. In the backward path, the measured 3-dB bandwidth is from 23.32 GHz to 45.83 GHz, with an insertion loss of 1.87 dB. The GCR is 16.5 dB, with a maximum RMS phase variation of 5.48°. The chip consumes 28.5 mW of DC power from a 1.2-V supply, occupying a core area of 0.37 mm2
Event(s)
2025 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2025
Publisher
IEEE
Type
conference paper