Design and Bias Network Optimization of a Ka-Band CMOS Power Amplifier with 32.5% Modulation PAE Supporting 64-QAM
Journal
Asia-Pacific Microwave Conference Proceedings, APMC
Start Page
1
End Page
3
ISSN
26903946
ISBN (of the container)
979-833153455-4
Date Issued
2026-02-18
Author(s)
Abstract
This work presents a Ka-band Class-F PA in 90 nm CMOS for 5G mmWave applications with design and bias network optimization. The PA features a differential common-source topology with neutralization for improved gain and stability, and a harmonic-tuned output network for enhanced efficiency. An optimized bias network reduces low-frequency leakage, improving modulation linearity. The PA achieves 14.0 dBm OP1dB and 40.1% power-added efficiency (PAE) at 27.5 GHz. Under 64-QAM, it delivers 32.5% and 28.1% average PAE at 100 and 400 MSym/s with error vector magnitude (EVM) < -25 dB.
Event(s)
2025 Asia-Pacific Microwave Conference, APMC 2025
Subjects
5G mobile Communication
64-QAM
Component Carriers
Ka-band
power amplifier
Publisher
IEEE
Type
conference paper