https://scholars.lib.ntu.edu.tw/handle/123456789/75788
Title: | Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots | Authors: | Banerjee, Writam Yang, Jer-Ren et al. |
Issue Date: | 2012 | Start page/Pages: | 194 | Source: | Nanoscale Research Letters | URI: | http://ntur.lib.ntu.edu.tw//handle/246246/243604 | DOI: | 10.1186/1556-276X-7-194 |
Appears in Collections: | 材料科學與工程學系 |
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