公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2005 | InAs/InGaAs/GaAs coupled quantum-dot laser | C. S. Lee; F. Y. Chang; D. S. Liu; HAO-HSIUNG LIN | MBE Taiwan 2005 | | | |
2001 | InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m | Ding-Kang Shih; H. H. Lin; Y. H. Lin; HAO-HSIUNG LIN | Electronics Letters | | 37 | |
2001 | InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength λ=2.38 μm | Shih, Ding-Kang; Lin, Hao-Hsiung ; Lin, Y.H. | Electronics Letters | | | |
2001 | InAsN Grown by Plasma-assisted Gas Source MBE | D. K. Shih; H. H. Lin; T. Y. Chu; T. R. Yang; HAO-HSIUNG LIN | 2001 MRS Fall meeting, Symposium H | | | |
1999 | InAsN quantum wells grown on InP by gas source MBE | J. S. Wang; H. H. Lin; L. W. Sung; G. R. Chen; HAO-HSIUNG LIN | 3rd international conference on mid-infrared optoelectronics materials and devices | | | |
2003 | InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasers | D.-K. Shih; Y.-H. Lin; K.-H. Chiang; HAO-HSIUNG LIN | The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003 | 1 | 0 | |
1999 | InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy | J. S. Wang; G. R. Chen; L. W. Sung; HAO-HSIUNG LIN | 1999 Electron Devices and Materials Symposia | | | |
2006 | InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; C. E. Wu; C. R. Wu; Y. T. Lin; HAO-HSIUNG LIN | 14th international conference on molecular beam epitaxy | | | |
2007 | InAsPSb quaternary alloy grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; C. E. Wu; C. J. Wu; Y. T. Lin; HAO-HSIUNG LIN | Journal of Crystal Growth | 10 | 9 | |
2006 | InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; C. E. Wu; C. R. Wu; Y. T. Lin; HAO-HSIUNG LIN | MBE Taiwan 2006 and high K materials workshop | | | |
2010 | InAsPSb/InAs photodetectors grown by gas source molecular beam epitaxy | C. J. Wu; S. W. Lo; HAO-HSIUNG LIN | 2010 internal conference on optics and photonics in Taiwan | | | |
2015 | InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4 μm | Lin, Y.-C.; Mao, M.-H.; Wu, C.-J.; Lin, H.-H.; MING-HUA MAO ; HAO-HSIUNG LIN | Optics Letters | | 3 | |
2009 | InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxy | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN | | | |
2007 | InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy | C. J. Wu; G. Tsai; D. L. Wang; HAO-HSIUNG LIN | 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8) | | | |
1995 | The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy | Lee, T.-L.; Liu, J.-S.; HAO-HSIUNG LIN | Journal of Crystal Growth | | | |
2007 | Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy | T. C. Ma; Y. T. Lin; T. Y. Chen; L. C. Chou; HAO-HSIUNG LIN | 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials | 1 | 11 | |
1996 | Incorporation of group V elements in Ga<inf>x</inf>In<inf>1-x</inf>As<inf>y</inf>P<inf>1-y</inf> grown by gas source molecular beam epitaxy | Lee, T.-L.; Liu, J.-S.; HAO-HSIUNG LIN | Journal of Electronic Materials | | | |
2006 | Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy | T. C. Ma; Y. T. Lin; T. Y. Chen; HAO-HSIUNG LIN | OPT 2006 | | | |
2016 | Indium and nitrogen K-edge X-ray absorption spectroscopy of In <inf>x</inf> Ga <inf>1-x</inf> N | Li, X.; Chang, C.M.; Hsueh, C.-H.; Lee, Z.-F.; Chen, J.-M.; Lin, H.-H.; Wang, X.; Dietz, N.; Guan, Y.-J.; Feng, Z.C.; HAO-HSIUNG LIN | 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016 | | | |
2015 | Influence of tunneling barrier width on the forward current characteristics of InAs-based microwave p-n diode | Yang, C.C.; Su, Y.K.; Lin, H.H.; HAO-HSIUNG LIN | Microelectronics Journal | | | |