公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1999 | Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy | Lin, Yo-Sheng; Lu, Shey-Shi ; Chang, Pei-Zen | Journal of Applied Physics | | | |
1999 | Ga<inf>0.51</inf>In<inf>0.49</inf>P/ln<inf>x</inf>Ga<inf>1-x</inf>As/GaA s lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy | Lin, Y.-S.; Lu, S.-S. ; PEI-ZEN CHANG | Journal of Applied Physics | 6 | 7 | |
2014 | Gold plated carbon nanotube bundle antenna for millimeter-wave applications | SHEY-SHI LU | IEEE Electron Device Letters | 4 | 3 | |
2013 | Gold plating carbon nano tube antenna integrated with voltage control oscillator | Lin, K.-T.; Hsieh, J.-Y.; Chen, Y.-J.; Chang, S.-H.; Yang, Y.-J.; SHEY-SHI LU | Progress in Electromagnetics Research Symposium | | | |
1992 | GSMBE grown (GaIn)P/GaAs heterojunction bipolar transistors exhibiting current gains up to 590 | Lu, S.S.; Huang, C.C.; SHEY-SHI LU | Electronics Letters | | | |
1998 | High aspect-ratio fine-line metallization | Chang, C.; Chang, P.; Yen, K.; SHEY-SHI LU ; PEI-ZEN CHANG | Proceedings of SPIE - The International Society for Optical Engineering | 4 | 0 | |
1992 | High Perform Ance in0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistor Grown by Gas Source Molecular Beam Epitaxy | Wu, Chung Cheng; 呂學士 ; 李嗣涔 ; Williamson, F.; Nathan, M. I.; Lu, Shey-Shi ; Lee, Si-Chen | International Conference on Solid State Devices and Materials, SSDM | | | |
2005 | High performance GaInP/GaAs HBT radio frequency integrated circuits at 5 GHz | SHEY-SHI LU | Asia-Pacific Microwave Conference Proceedings, APMC | 1 | 0 | |
1996 | High-breakdown-voltage Ga/sub 0.51/In/sub 0.49/P channel MESFET's grown by GSMBE | Lin, Y.-S.; Lu, S.-S. | IEEE Electron Device Letters | 15 | 16 | |
1995 | High-breakdown-voltage Ga0.51In0.49P/GaAs I-HEMT and I2HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy | Sun, T.P.; Huang, C.L.; Lu, S.S. | Solid State Electronics | 17 | 16 | |
1992 | High-Current-Gain Ga0.51In0.49P/GaAs Heterojunction Bipolar Transistor Grown by Gas-Source Molecular Beam Epitaxy | Lu, S.S.; Huang, C.C.; SHEY-SHI LU | IEEE Electron Device Letters | | | |
1992 | High-Current-Gain Small-Offset-Voltage In0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistors Grown by Gas Source Molecular Beam Epitaxy | Lu, S.S.; Wu, C.C.; SHEY-SHI LU | IEEE Electron Device Letters | | | |
1995 | High-linearity high current drivability GaInP/GaAs MISFET using GaInP airbridge gate structure grown by GSMBE | Lu, Shey-Shi ; Lin, Yo-Shen | International Semiconductor Conference, CAS | 0 | 0 | |
1995 | High-Linearity High-Current-Drivability Ga0.51In0.49P/GaAs MISFET Using Ga0.51In0.49P Airbridge Gate Structure Grown by GSMBE | SHEY-SHI LU | IEEE Electron Device Letters | 27 | 29 | |
2005 | High-performance fully integrated 4 GHz CMOS LC VCO in standard 0.18-μm CMOS technology | SHEY-SHI LU ; Lu, Shey-Shi ; Wang, Tao ; Lin, Yo-Sheng | Emerging Information Technology Conference 2005 | 1 | 0 | |
1997 | High-performance Ga/sub 0.51/In/sub 0.49/P/GaAs airbridge gate MISFET's grown by gas-source MBE | Wang, Y.-J.; Lin, Y.-S.; Lu, S.-S. | IEEE Transactions on Electron Devices | 34 | 33 | |
1992 | High-performance In0.49Ga0.51P/GaAs tunneling emitter bipolar transistor grown by gas source molecular beam epitaxy | Wu, C.C.; Lu, S.S.; Lee, S.C.; Williamson, F.; Nathan, M.I.; SHEY-SHI LU | Conference on Solid State Devices and Materials | | | |
2007 | High-performance single-turn interlaced-stacked transformers for Ka-Band CMOS RFIC applications | SHEY-SHI LU | Microwave and Optical Technology Letters | 0 | 0 | |
1997 | High-power high-speed Ga0.51In0.49P/InxGa1-xAs doped-channel FET's | Lin, Yo-Sheng; Lu, Shey-Shi | International Conference on Indium Phosphide and Related Materials | 0 | 0 | |
2004 | High-quality-factor (33) and high-resonant-frequency (35 GHz) spiral inductors fabricated in 0.25-μM mixed-signal/RF-CMOS technology | SHEY-SHI LU | Microwave and Optical Technology Letters | 0 | 0 | |