公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Carbon materials for em wave absorption in v band applications | Kuo, P.-H.; Lin, K.-T.; Wang, T.; Lu, S.-S.; Yang, Y.-J.; Chang, S.-H.; SHEY-SHI LU | Asia-Pacific Microwave Conference Proceedings, APMC | | | |
2003 | Characterization and modeling of 100 nm RF generic CMOS and 500 nm RF power CMOS | SHEY-SHI LU | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | 7 | 0 | |
2007 | Characterization and modeling of pattern ground shield and silicon-substrate effects on radio-frequency monolithic bifilar transformers for ultra-wide band radio-frequency integrated circuit applications | SHEY-SHI LU | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 3 | 3 | |
2003 | Characterization and modeling of size effect on the performances of 0.10 μm RF MOSFETs for SOC applications | SHEY-SHI LU | IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers | | | |
2002 | Characterization and modeling of small-signal substrate resistance effect in RF CMOS | Lin, Y.-S.; Lu, S.-S.; Lee, T.-H.; Liang, H.-B.; SHEY-SHI LU | IEEE MTT-S International Microwave Symposium | | | |
2003 | Characterization and modeling of the anomalous dip in scattering parameter S<inf>11</inf> of InGaP/GaAs HBTs | SHEY-SHI LU | IEEE International Symposium on Compound Semiconductors, Proceedings | 0 | 0 | |
2011 | Chip implementation with a combined wireless temperature sensor and reference devices based on the DZTC principle | Chang, M.-H.; Huang, Y.-J.; Huang, H.-P.; SHEY-SHI LU ; HAN-PANG HUANG | Sensors | 3 | 3 | |
2007 | CMOS RF circuits for 5-GHz BWA | SHEY-SHI LU | 2007 IEEE Mobile WiMAX Symposium | 1 | 0 | |
2009 | CMOS wideband LNA design using integrated passive device | Chen, H.-K.; Hsu, Y.-C.; Lin, T.-Y.; Chang, D.-C.; Juang, Y.-Z.; SHEY-SHI LU | IEEE MTT-S International Microwave Symposium | | | |
2009 | CMOS-compatible electrochemical process for RF CMOS inductors | SHEY-SHI LU ; Ding, Ling-Yi; Wang, Tao ; WEN-PIN SHIH ; Hu, Yuh-Chung; Shih, Wen-Pin ; Lu, Shey-Shi ; Chang, Pei-Zen | TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems | 2 | 0 | |
2006 | Conductive atomic force microscopy application for semiconductor failure analysis in advanced nanometer process | Lin, K.; Zhang, H.; SHEY-SHI LU | International Symposium for Testing and Failure Analysis | | | |
2012 | A controlled-release drug delivery system on a chip using electrolysis | Huang, P.-L.; Kuo, P.-H.; Huang, Y.-J.; Liao, H.-H.; Yang, Y.-J.J.; Wang, T.; Wang, Y.-H.; YAO-JOE YANG ; SHEY-SHI LU ; Wang, Tao ; Lu, Shey-Shi | IEEE Transactions on Industrial Electronics | 21 | 18 | |
2003 | DC and RF characteristics of E-mode Ga<inf>0.51</inf>In<inf>0.49</inf>P-In<inf>0.15</inf>Ga<inf>0.85</inf>As pseudomorphic HEMTs | SHEY-SHI LU | IEEE Electron Device Letters | 13 | 13 | |
1999 | DC and RF characteristics of submicron gate FET's formed by micromachined V-groove technology | Ho, Nien-Show; SHEY-SHI LU | Proceedings of SPIE - The International Society for Optical Engineering | | | |
1993 | DC characterization of Ga0.51In0.49P/GaAs insulated-gate inverted-structure HEMT grown by Gas Source Molecular Beam Epitaxy (GSMBE) | SHEY-SHI LU | European Solid-State Device Research Conference | | | |
1992 | DC characterization of GaInP/GaAs tunneling emitter bipolar transistors | Lu, S.S.; Wu, C.C.; Huang, C.C.; Williamson, F.; Nathan, M.I.; LuSS | Indium Phosphide and Related Materials, 1992., Fourth International Conference on | 0 | 0 | |
1992 | Dc characterization of the Ga<inf>0.51</inf>In<inf>0.49</inf>P/GaAs tunneling emitter bipolar transistor | SHEY-SHI LU ; CHUNG-CHIH WU ; Huang, C.C.; Williamson, F.; Nathan M.I. | Applied Physics Letters | 6 | 5 | |
2004 | DC to 6-GHz high-gain low-noise GaInP/GaAs HBT direct-coupled amplifiers with and without emitter-capacitive peaking | SHEY-SHI LU | Microwave and Optical Technology Letters | 0 | 0 | |
2003 | DC to 8 GHz 11 dB gain Gilbert micromixer using GaInP/GaAs HBT technology | SHEY-SHI LU | Electronics Letters | 21 | 13 | |
2003 | DC, and RF scattering parameters, noise and power characteristics of enhancement-mode In<inf>0.51</inf>Ga<inf>0.49</inf>P/In<inf>0.15</inf>Ga<inf>0.85</inf>/As/GaAs power pHEMTs | SHEY-SHI LU | IEEE International Symposium on Compound Semiconductors, Proceedings | 0 | 0 | |