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Lin, CA
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Showing results 14 to 18 of 18
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Issue Date
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scopus
WOS
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2011
Publisher's Note:``Attainment of low interfacial trap density absent of a large midgap peak in In0. 2Ga0. 8As by Ga2O3 (Gd2O3) passivation''[Appl. Phys. Lett. 98, 062108 (2011)]
Lin, CA; MINGHWEI HONG et al.
Applied Physics Letters
2012
Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-deposition
Lin, TD; Chang, YH; Lin, CA; Huang, ML; Lee, WC; Kwo, J; MINGHWEI HONG
Applied Physics Letters
2008
Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2 O 3/Ga 2 O 3 (Gd 2 O 3 as gate dielectrics
Lin, TD; Chen, Christine P; Chiu, HC; Chang, Peter; Lin, CA; MINGHWEI HONG
; Kwo, J; Tsai, W
Device Research Conference, 2008
2009
Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics
Lin, TD; Chiu, HC; Chang, P; Chang, YH; Lin, CA; Chang, WH; Kwo, J; Tsai, W; MINGHWEI HONG
Proceedings of the European Solid State Device Research Conference, 2009
2011
Self-aligned inversion-channel In0. 2Ga0. 8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3 (Gd2O3) as the gate dielectric
Chang, WH; Chiang, TH; Wu, YD; MINGHWEI HONG
; Lin, CA; Kwo, J
Journal of Vacuum Science & Technology B