公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2012 | Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-deposition | Lin, TD; Chang, YH; Lin, CA; Huang, ML; Lee, WC; Kwo, J; MINGHWEI HONG | Applied Physics Letters | | | |
2008 | Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2 O 3/Ga 2 O 3 (Gd 2 O 3 as gate dielectrics | Lin, TD; Chen, Christine P; Chiu, HC; Chang, Peter; Lin, CA; MINGHWEI HONG ; Kwo, J; Tsai, W | Device Research Conference, 2008 | | | |
2009 | Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Chang, YH; Lin, CA; Chang, WH; Kwo, J; Tsai, W; MINGHWEI HONG | Proceedings of the European Solid State Device Research Conference, 2009 | | | |
2011 | Self-aligned inversion-channel In0. 2Ga0. 8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3 (Gd2O3) as the gate dielectric | Chang, WH; Chiang, TH; Wu, YD; MINGHWEI HONG ; Lin, CA; Kwo, J | Journal of Vacuum Science & Technology B | | | |