公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2014 | The demonstration of colossal magneto-capacitance and 'negative' capacitance effect with the promising characteristics of Jg-EOT and transistor's performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design | Liao, M.-H. ; Huang, S.C.; Liu, C.Y.; Chen, P.G.; Kao, S.C.; Lien, C. | Symposium on VLSI Technology | 4 | 0 | |
2014 | The demonstration of colossal magneto-capacitance and “negative” capacitance effect with the promising characteristics of Jg-EOT and transistor’s performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design | M.-H. Liao; S. C. Huang; C. Y. Liu; P. G. Chen; S. C. Kao; C. Lien; MING-HAN LIAO | 2014 Symposium on VLSI Technology (VLSI-technology) | | | |
2014 | The demonstration of colossal magneto-capacitance effect with the promising gate stack characteristics on Ge (100) by the magnetic gate stack design | M. H.Liao ; S.-C. Huang | Applied Physics Letters | | | |
2014 | The demonstration of D-SMT stressor on Si and Ge n-FinFETs | Liao, M.-H. ; Chen, P.G.; Huang, S.C.; Kao, S.C.; Hung, C.X.; Liu, K.H.; Lien, C.; Liu, C.Y. | Symposium on VLSI Technology | 6 | 0 | |
2015 | The demonstration of dislocation-stress memorization technique stressor on Si n-FinFETs | M. H.Liao ; P.-G. Chen | IEEE Transactions on Nanotechnology | 2 | 1 | |
2018 | The demonstration of high-performance multilayer BaTiO <inf>3</inf> /BiFeO <inf>3</inf> stack MIM capacitors | Lien, C.; Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Wei, S.-J.; Chu, Y.-H.; Liao, M.-H. ; Lee, M.-H. | IEEE Transactions on Electron Devices | 9 | 9 | |
2018 | The Demonstration of High-Performance Multilayer BaTiO3/BiFeO3 Stack MIM Capacitors | C. Lien; C.-F. Hsieh; H.-S. Wu; T.-C. Wu; S.-J. Wei; Y.-H. Chu; M.-H. Liao; M.-H. Lee; MING-HAN LIAO | IEEE Transactions on Electron Devices | | | |
2022 | The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology | Yen C; Chang S; Chen K; Feng Y; Chen L; Liao B; Lee M; Chen S; Liao M.; MING-HAN LIAO | IEEE Transactions on Electron Devices | | | |
2022 | The demonstration of low-temperature (350 °C) grown carbon nano-tubes for the applications of through silicon via in 3D stacking and power-via | HSIN-YI LIN; Basu, Nilabh; Chen, S. C.; Lee, M. H.; MING-HAN LIAO | Applied Physics Letters | 3 | 3 | |
2013 | The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via) | M. H.Liao ; G.-H. Liu; M.-Y. Yu; C.-H. Chen; C.-X. Hong | AIP Advances | 3 | 2 | |
2015 | The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme | Liao, M.-H.; Huang, S.C.; MING-HAN LIAO | Applied Physics Letters | | | |
2015 | The demonstration of promising Ge ntype multi-gate-FETs with the magnetic FePt metal gate scheme | M. H.Liao ; P.-G. Chen | Applied Physics Letters | | | |
2015 | The demonstration of the magnetic Ge metal-oxide-semiconductor field-effect transistor | M. H.Liao ; S.-C. Huang | AIP Advances | | | |
2015 | The demonstration of the novel nanotube Si device with the promising device performance behavior | M. H.Liao ; C. P. Hsieh | 9th International Conference on Silicon Epitaxy and Heterostructures | | | |
2015 | The demonstration of the Si nano-tube device with the promising short channel control | M. H.Liao ; P.-G. Chen | Journal of Applied Physics | | | |
2009 | The Dependence of the Performance of Strained NMOSFETs on Channel Width | Lingyen Yeh; Ming Han Liao; Chun Heng Chen; Jun Wu; Joseph Ya-min Lee; Chee Wee Liu; T. L. Lee; M. S. Liang; MING-HAN LIAO | IEEE Trans. on Electron Devices | | | |
2015 | The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs | M. H.Liao ; P.-G. Chen | Applied Physics Letters | | | |
2019 | The Development of a Dynamic Model to Investigate the Dielectric Layer Thickness Effect for the Device Performance in Triboelectric Nanogenerators | Liao, M.-H.; Wu, C.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU | IEEE Transactions on Electron Devices | | | |
2008 | Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors | Cheng, T.-H.; Liao, M.H.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; CHEE-WEE LIU ; MING-HAN LIAO | Journal of Applied Physics | 8 | 7 | |
2020 | Double Layers Omega FETs with Ferroelectric HfZrO 2 for One-Transistor Memory | Chen, K.-T. et al.; MING-HAN LIAO | IEEE International Reliability Physics Symposium Proceedings | | | |