公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1987 | Interface Properties of Al/Ta205/Si02/Si (P) Capacitor | Hwu, Jenn-Gwo ; Wang, Way-Seen | | | | |
2013 | Interface trap redistribution and deep depletion behavior of non-planar MOS with ultra thin oxide grown by anodic oxidation | Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
2015 | Intrinsic I-V and C-V characteristics of ultra-thin oxide MOS (p) and MOS (n) structures under deep depletion | JENN-GWO HWU | International Journal of Nanotechnology | 4 | 4 | |
2012 | Investigation of carbon interstitials with varied SiO2 thickness in HfO2/SiO2/4H-SiC structure | JENN-GWO HWU | Applied Physics Letters | 8 | 7 | |
2017 | Investigation of interface property in Al/SiO2/n-SiC structure with thin gate oxide by illumination | JENN-GWO HWU | Applied Physics A | 0 | 0 | |
2012 | Investigation of nonuniformity phenomenon in nanoscale SiO 2 and high-k gate dielectrics | JENN-GWO HWU | Journal of Applied Physics | 5 | 5 | |
2011 | Investigation of the two-state current conduction mechanism in high-kSiO 2 stacked dielectric with high bandgap 4H-SiC substrate | Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 2 | 3 | |
2014 | Investigation on edge fringing effect and oxide thickness dependence of inversion current in metal-oxide-semiconductor tunneling diodes with comb-shaped electrodes | Lin, C.-C.; Hsu, P.-L.; Lin, L.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 7 | 7 | |
2016 | Lateral Non-uniformity Reduction by Compensatory Metal Embedded in MOS Structure with Ultra-Thin Anodic Oxide | J.Y.Chen; W.C.Kao; J.G.Hwu*; JENN-GWO HWU | Electrochemical Society Transactions - Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufactur | 1 | 0 | |
2008 | Lateral nonuniformity effects of border traps on the characteristics of metal-oxide-semiconductor field-effect transistors subjected to high-field stresses | Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 11 | 10 | |
2006 | Lateral nonuniformity of effective oxide charges in MOS capacitors with A12O3 gate dielectrics | Huang, S.-W.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 22 | 18 | |
2013 | Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effect | Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 11 | 0 | |
2018 | Light Sensing Enhancement and Energy Saving Improvement in Concentric Double MIS(p) Tunnel Diode Structure with Inner Gate Outer Sensor (IGOS) Operation | Y.H.Chen; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 2 | |
2018 | Light sensing enhancement and energy saving improvement in concentric double-MIS(p) tunnel diode structure with inner gate outer sensor operation | Chen Y.-H; JENN-GWO HWU | IEEE Transactions on Electron Devices | | | |
2018 | Light-to-Dark Current Ratio Enhancement on MIS Tunnel Diode Ambient Light Sensor by Oxide Local Thinning Mechanism and Near Power-Free Neighboring Gate | C.F.Yang; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 6 | 6 | |
2016 | Local Thinning Induced Less Oxide Breakdown in MOS Structures Due to Lateral Non-Uniformity Effec | H.H.Lin; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions, | 0 | 0 | |
2002 | Local thinning-induced oxide nonuniformity effect on the tunneling current of ultrathin gate oxide | Hong, C.-C.; Chen, W.-R.; JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 5 | | |
2022 | Local-Oxide-Thinning-Induced Deep Depletion Phenomenon in MOS Capacitors | Lin K.-W; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 1 | 1 | |
2007 | Low temperature (<400 °c) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidation | JENN-GWO HWU | Applied Physics Letters | 10 | 10 | |
2009 | Low temperature tandem aluminum oxides prepared by DAC-ANO compensation in nitric acid | Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 1 | 1 | |