公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1999 | High field effect mobility deuterated amorphous silicon thin-film transistors based on the substitution of hydrogen with deuterium | Yeh, J.-L.; Lee, S.-C.; SI-CHEN LEE | IEEE Electron Device Letters | 1 | 1 | |
1992 | High Gain Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Prepared by Molecular Beam Epitaxy | Wu, Chung Cheng; Lee, Si-Chen ; Lin, Hao-Hsiung | Japanese Journal of Applied Physics | 2 | 1 | |
2010 | High mobility a-Si:H TFT fabricated by hot wire chemical vapor deposition | Hsueh, C.-Y.; Yang, C.-H.; Lee, S.-C.; SI-CHEN LEE | Materials Research Society Symposium | | | |
1992 | High Perform Ance in0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistor Grown by Gas Source Molecular Beam Epitaxy | Wu, Chung Cheng; 呂學士 ; 李嗣涔 ; Williamson, F.; Nathan, M. I.; Lu, Shey-Shi ; Lee, Si-Chen | International Conference on Solid State Devices and Materials, SSDM | | | |
1991 | High Performance a-Si:H Thin Film Transistor Using Lightly Doped Channel | Sah, Wen-Jyh; Lin, Jyh-Ling; 李嗣涔 ; Lee, Si-Chen | IEEE Transactions on Electron Devices | | | |
1990 | High Performance Metal/SiO2/InSb Capacitor Fabricated by Photo-Enhanced Chemical Vapor Deposition | Sun, Tai-Ping; 李嗣涔 ; Lin, Kuen-Chyung; Pang, Y. M.; 楊聲震; Lee, Si-Chen ; Yang, Seng-Jenn | Journal of Applied Physics | | | |
2006 | High performance midinfrared narrow-band plasmonic thermal emitter | Tsai, M.-W.; Chuang, T.-H.; Meng, C.-Y.; Chang, Y.-T.; Lee, S.-C.; SI-CHEN LEE | Applied Physics Letters | 123 | 92 | |
2017 | High Performance MoS2 TFT using Graphene Contact First Process | C. S. Chang Chien; H. M. Chang; W. T. Lee; M. R. Tang; CHAO-HSIN WU ; SI-CHEN LEE | AIP Advance | 5 | 4 | |
1989 | High Power, Nearly Diffraction-Limited Beam Output of a Double Y- Junction Diode Laser Array | Wu, Ta-Chung; 李嗣涔 ; Lee, Si-Chen | The 15th EDMS | | | |
1985 | High Quality a-Si:H Prepared by Low Frequency Glow-Discharge | Tsai, H. K.; Tzeng, W. J.; 李嗣涔 ; Lee, Si-Chen | The 11th EDMS | | | |
2005 | High responsivity quantum-dot infrared photodetector with Al <inf>0.1</inf> Ga <inf>0.9</inf> As blocking layers at both sides of the structure | Lin, S.-Y.; Chi, J.-Y.; Lee, S.-C.; SI-CHEN LEE | Journal of Crystal Growth | 4 | 5 | |
1995 | High temperature InAs infrared detector based on metal-insulator-semiconductor structure | Su, Hung-Der; Chang, Shou-Zen; SI-CHEN LEE ; Sun, Tai-Ping | Electronics Letters | 4 | 4 | |
2000 | High temperature operated (~250 K) photovoltaic-photoconductive (PV-PC) mixed-mode InAs/GaAs quantum dot infrared photodetector | Tang, Shiang-Feng; Lin, Shih-Yen; Lee, Si-Chen ; Kuan, Chieh Hsiung ; Cherng, Ya-Tung | Electron Devices Meeting, 2000 | 0 | 0 | |
1991 | High-Performance a-Si:H Thin-Film Transistor Using Lightly Doped Channel | Lin, Jyh-Ling; Sah, Wen-Jyh; Lee, Si-Chen | IEEE Transactions on Electron Devices | 8 | 8 | |
2001 | High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer | Lin, S.-Y.; Tsai, Y.-R.; SI-CHEN LEE | Applied Physics Letters | 66 | 61 | |
1990 | High-performance metal/SiO <inf>2</inf> /InSb capacitor fabricated by photoenhanced chemical vapor deposition | Sun, T.-P.; Lee, S.-C.; Liu, K.-C.; Pang, Y.-M.; Yang, S.-J.; SI-CHEN LEE | Journal of Applied Physics | 6 | 6 | |
1990 | High-Performance Metal/SiO2/InSb Capacitor Fabrication by Photoenhanced Chemical Vapor Deposition | Sun, Tai-Ping; 李嗣涔 ; Liu, Kou-Chen; Panf, Y. M.; 楊聲震; Lee, Si-Chen ; Yang, Seng-Jenn | Journal of Applied Physics | | | |
2005 | High-performance narrow-bandwidth multicolor InAs/AlGaAs/GaAs quantum dot infrared photodetector | Chen, S.-D.; Chen, Y.-Y.; SI-CHEN LEE | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 4 | 4 | |
2006 | High-temperature operation normal incident 256 × 256 InAs - GaAs quantum-dot infrared photodetector focal plane array | Tang, S.-F.; Chiang, C.-D.; Weng, P.-K.; Gau, Y.-T.; Luo, J.-J.; Yang, S.-T.; Shih, C.-C.; Lin, S.-Y.; Lee, S.-C.; SI-CHEN LEE | IEEE Photonics Technology Letters | 76 | 66 | |
1988 | The hot electron effect in double heterojunction bipolar transistors: Theory and experiment | Chen, Chung-Zen; Lee, Si-Chen ; Lin, Hao-Hsiung | Solid-State Electronics | 2 | 1 | |