公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2007 | Effect of Al incorporation in the thermal stability of atomic-layer- deposited HfO<inf>2</inf> for gate dielectric applications | Chiou, Y.-K.; Chang, C.-H.; Wang, C.-C.; Lee, K.-Y.; Wu, T.-B.; Kwo, R.; MINGHWEI HONG | Journal of the Electrochemical Society | | | |
2007 | Effect of Al incorporation in the thermal stability of atomic-layer-deposited HfO2 for gate dielectric applications | Chiou, Yan-Kai; Chang, Che-Hao; Wang, Chen-Chan; Lee, Kun-Yu; Wu, Tai-Bor; Kwo, Raynien; MINGHWEI HONG | Journal of the Electrochemical Society | | | |
1986 | Effect of oxidation on the magnetic properties of unprotected TbFe thin films | Van Dover, RB; Gyorgy, EM; Frankenthal, RP; MINGHWEI HONG ; Siconolfi, DJ | Journal of Applied Physics | | | |
1998 | Effect of temperature on Ga2O3 (Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors | Ren, F; MINGHWEI HONG ; Chu, SNG; Marcus, MA; Schurman, MJ; Baca, A; Pearton, SJ; Abernathy, CR | Applied Physics Letters | | | |
1998 | Effect of temperature on Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN metal-oxide-semiconductor field-effect transistors | Ren, F.; MINGHWEI HONG ; Chu, S.N.G.; Marcus, M.A.; Schurman, M.J.; Baca, A.; Pearton, S.J.; Abernathy, C.R. | Applied Physics Letters | | | |
1998 | Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors | Abernathy, CR; Baca, A; Chu, SNG; MINGHWEI HONG ; Lothian, JR; Marcus, MA; Pearton, SJ; Ren, F; Schurman, MJ | | | | |
1998 | Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors; Applied Physics Letters | Abernathy, CR; Baca, A; Chu, SNG; MINGHWEI HONG ; Lothian, JR | | | | |
2010 | Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layers | Chu, LK; Chu, RL; Lin, TD; Lee, WC; Lin, CA; Huang, ML; Lee, YJ; Kwo, J; MINGHWEI HONG | Solid-State Electronics | | | |
2010 | Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers | Chu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; MINGHWEI HONG | Solid-State Electronics | | | |
2012 | Effective passivation of In <inf>0.2</inf>Ga <inf>0.8</inf>As by HfO <inf>2</inf> surpassing Al <inf>2</inf>O <inf>3</inf> via in-situ atomic layer deposition | Chang, Y.H.; Lin, C.A.; Liu, Y.T.; Chiang, T.H.; Lin, H.Y.; Huang, M.L.; Lin, T.D.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | | | |
2012 | Effective passivation of In0. 2Ga0. 8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition | Chang, YH; Lin, CA; Liu, YT; Chiang, TH; Lin, HY; Huang, ML; Lin, TD; Pi, TW; Kwo, J; MINGHWEI HONG | Applied Physics Letters | | | |
2010 | Effective reduction of interfacial traps in Al 2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing | Chang, YC; MINGHWEI HONG et al. | Applied Physics Letters | | | |
2010 | Effective reduction of interfacial traps in Al2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing | Chang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; Wang, W.-E.; Dekoster, J.; Meuris, M.; Caymax, M.; Heyns, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | | | |
2017 | Effective surface passivation of In<inf>0.53</inf>Ga<inf>0.47</inf>As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO<inf>2</inf> ??A comparative study | MINGHWEI HONG ; Wan, H.W.; Chang, P.; Lin, T.D.; Chang, Y.H.; Lee, W.C.; Pi, T.W.; Kwo, J. | Journal of Crystal Growth | | | |
1979 | EFFECTS OF 3RD ELEMENT ADDITION ON THE METALLURGICAL AND SUPERCONDUCTING PROPERTIES OF WIRES OR TAPES IN THE V-GA SYSTEM | DIETDERICH, D; MINGHWEI HONG ; MORRIS, JW | Journal of Metals | | | |
2002 | Electrical characteristics of ultrathin Pt/Y 2 O 3/Si capacitor with rapid post-metallisation annealing | Lay, TS; Liu, WD; Kwo, J; MINGHWEI HONG ; Mannaerts, JP | Electronics Letters | | | |
2002 | Electrical characteristics of ultrathin Pt/Y<inf>2</inf>O<inf>3</inf>/Si capacitor with rapid post-metallisation annealing | Lay, T.S.; Liu, W.D.; Kwo, J.; MINGHWEI HONG ; Mannaerts, J.P. | Electronics Letters | | | |
2011 | Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al 2 O 3 on freshly molecular beam epitaxy grown GaAs | Chang, YH; Huang, ML; Chang, P; Lin, CA; Chu, YJ; Chen, BR; Hsu, CL; Kwo, J; Pi, TW; MINGHWEI HONG | Microelectronic Engineering | | | |
2011 | Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al<inf>2</inf>O<inf>3</inf> on freshly molecular beam epitaxy grown GaAs | Chang, Y.H.; Huang, M.L.; Chang, P.; Lin, C.A.; Chu, Y.J.; Chen, B.R.; Hsu, C.L.; Kwo, J.; Pi, T.W.; MINGHWEI HONG | Microelectronic Engineering | | | |
1989 | Electrical response of superconducting YBa 2 Cu 3 O/sub 7-//sub $δ$/to light | Brocklesby, WS; Monroe, D; Levi, AFJ; MINGHWEI HONG ; Liou, SH; Kwo, J; Rice, CE; Mankiewich, PM; Howard, RE | | | | |