公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2005 | Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing | Liao, K.F.; Chen, P.S.; Lee, S.W.; Chen, L.J.; CHEE-WEE LIU | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | | | |
2008 | Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing | CHEE-WEE LIU ; Chen, P.S.; Lee, S.W.; Lee, M.H.; CHEE-WEE LIU | Applied Surface Science | | | |
2008 | Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing | Chen, P.S.; Lee, S.W.; Lee, M.H.; Liu, C.W. | Applied Surface Science | | | ![全文連結/Archive Link](/image/mime_icon/pdf-128.png) |
2005 | Formation of SiCH <inf>6</inf>-mediated Ge quantum dots with strong field emission properties by ultrahigh vacuum chemical vapor deposition | Lee, S.W.; Chueh, Y.L.; Chen, L.J.; Chou, L.J.; Chen, P.S.; Tsai, M.-J.; CHEE-WEE LIU | Journal of Applied Physics | | | |
2004 | Ge Outdiffusion Effect on Flicker Noise
in Strained-Si nMOSFETs | Hua, W.C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M. | IEEE ELECTRON DEVICE LETTERS | | | ![全文連結/Archive Link](/image/mime_icon/pdf-128.png) |
2004 | Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs | CHEE-WEE LIU ; Hua, W.-C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2006 | Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs | Chen, P.S.; Lee, S.W.; Lee, M.H.; CHEE-WEE LIU | Semiconductor Science and Technology | | | |
2006 | Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots | Lee, S.W.; Chen, P.S.; Chien, T.Y.; Chen, L.J.; Chia, C.T.; CHEE-WEE LIU | Thin Solid Films | | | |
2004 | The growth of high-quality SiGe films with an intermediate Si layer | Lee, S.W.; Chen, P.S.; Tsai, M.-J.; Chia, C.T.; Liu, C.W.; Chen, L.J.; CHEE-WEE LIU | Thin Solid Films | | | |
2005 | Growth of strained Si on high-quality relaxed Si1-x Gex with an intermediate Si1-y Cy layer | Lee, S.W.; Chueh, Y.L.; Chen, L.J.; Chou, L.J.; Chen, P.S.; Lee, M.H.; Tsai, M.-J.; CHEE-WEE LIU | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | | | |
2003 | A High Efficient 820 nm MOS Ge Quantum Dot Photodetector | Hsu, B.-C.; Chang, S.T.; Chen, T.-C.; Kuo, P.-S.; Chen, P.S.; Pei, Z.; Liu, C.W. | IEEE Electron Device Letters | | | ![全文連結/Archive Link](/image/mime_icon/pdf-128.png) |
2002 | High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity | CHEE-WEE LIU ; Hsu, B.-C.; Chang, S.T.; Shie, C.-R.; Lai, C.-C.; Chen, P.S.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
2002 | High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity | Hsu, B.C.; Chang, S.T.; Shie, C.R.; Lai, C.C.; Chen, P.S.; Liu, C.W. | Electron Devices Meeting, 2002. IEDM '02. Digest. International | 0 | 0 | ![全文連結/Archive Link](/image/mime_icon/pdf-128.png) |
2002 | High efficient 850 nm and 1,310 nm multiple quantum well SiGe/Si heterojunction phototransistors with 1.25 Plus GHz bandwidth (850 nm) | CHEE-WEE LIU ; Pei, Z.; Liang, C.S.; Lai, L.S.; Tseng, Y.T.; Hsu, Y.M.; Chen, P.S.; Lu, S.C.; Liu, C.M.; Tsai, M.-J.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
2002 | High Throughput UHV/CVD SiGe and SiGe:C Process for sige HBT and strained Si FET | Chen, P.S.; Tseng, Y.T.; Tsai, M.-J.; CHEE-WEE LIU | 2002 Semiconductor Manufacturing Technology Workshop, SMTW 2002 | | | |
2003 | A High-Performance SiGe-Si Multiple-Quantum-Well Heterojunction Phototransistor | Pei, Zingway; Liang, C.S.; Lai, L.S.; Tseng, Y.T.; Hsu, Y.M.; Chen, P.S.; Lu, S.C.; Tsai, M.-J.; Liu, C.W. | IEEE Electron Device Letters | | | ![全文連結/Archive Link](/image/mime_icon/pdf-128.png) |
2006 | Hole confinement and 1/f noise characteristics of SiGe double-quantum-well p-Type metal-oxide-semiconductor field-effect transistors | CHEE-WEE LIU ; Lin, Y.M.; San Lein, W.U.; Chang, S.J.; Chen, P.S.; CHEE-WEE LIU | Japanese Journal of Applied Physics Part1 | | | |
2006 | Imapct of SiN on performance in novel CMOS architecture using substrate strained-SiGe and mechanical strained-si technology | CHEE-WEE LIU ; Lin, Y.M.; Wu, S.L.; Chang, S.J.; Chen, P.S.; CHEE-WEE LIU | Third International SiGe Technology and Device Meeting, ISTDM 2006 | | | |
2004 | Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments | Lee, S.W.; Chen, L.J.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; Chen, W.Y.; Hsu, T.M.; CHEE-WEE LIU | Applied Surface Science | | | |
2004 | Improvement of photoluminescence efficiency in stacked Ge/Si/Ge quantum dots with a thin Si spacer | CHEE-WEE LIU ; Chen, P.S.; Lee, S.W.; Peng, Y.H.; Liu, C.W.; Tsai, M.-J.; CHEE-WEE LIU | Physica Status Solidi (B) Basic Research | | | |