公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2004 | Growth of InAs quantum dots with light emission at 1.3 m | F. Y. Chang; C. S. Lee; C. C. Wu; HAO-HSIUNG LIN | MBE Taiwan | |||
2004 | Growth of InAs/InGaAs quantum dots and lasers with light emission at 1300 nm | F. Y. Chang; C. S. Lee; C. C. Wu; HAO-HSIUNG LIN | 2004 IEDMS | |||
2003 | InAs/InGaAs quantum dot laser grown by solid source molecular-beam epitaxy | F. Y. Chang; G. H. Liao; C. S. Lee; HAO-HSIUNG LIN | Electron devices and materials symposium | |||
2006 | InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer | C. S. Lee; F. Y. Chang; D. S. Liu; HAO-HSIUNG LIN | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2 | 2 | |
2005 | InAs/InGaAs/GaAs coupled quantum-dot laser | C. S. Lee; F. Y. Chang; D. S. Liu; HAO-HSIUNG LIN | MBE Taiwan 2005 | |||
2002 | Optical characterization on InAs/GaAs quantum dots | C. M. Lai; F. Y. Chang; C. W. Chang; H. H. Lin; G. J. Jan; HAO-HSIUNG LIN | 2002 IEDMS | |||
2004 | Optical gain measurement of quantum-dot structures by using a variable-stripe-length method with current injection | C. H. Yu; K. K. Kao; M. H. Mao; F. Y. Chang; HAO-HSIUNG LIN | OPT2004 | |||
2004 | Photoreflectance study on the interface of InGaP/GaAs heterostructure grown by gas source molecular beam epitaxy | C. M. Lai; F. Y. Chang; G. J. Jan; HAO-HSIUNG LIN | Japanese Journal of Applied Physics | 0 | 0 | |
2003 | Temperature dependence of photoreflectance in InAs/GaAs quantum dots | C. M. Lai; F. Y. Chang; C. W. Chang; C. H. Kao; H. H. Lin; G. J. Jan; J. Lee; HAO-HSIUNG LIN | Applied Physics Letters | 18 |