公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2022 | Experimental Demonstration of TreeFETs Combining Stacked Nanosheets and Low Doping Interbridges by Epitaxy and Wet Etching | Tu C.-T; Hsieh W.-H; Huang B.-W; Chen Y.-R; Liu Y.-C; Tsai C.-E; Chueh S.-J; CHEE-WEE LIU | IEEE Electron Device Letters | 11 | 10 | |
2021 | First Highly Stacked Ge0.95Si0.05 nGAAFETs with Record ION = 110 μA (4100 μA/μm) at VOV=VDS=0.5V and High Gm,max = 340 μS (13000 μS/μm) at VDS=0.5V by Wet Etching | Liu Y.-C; Tu C.-T; Tsai C.-E; Chen Y.-R; Chen J.-Y; Jan S.-R; Huang B.-W; Chueh S.-J; Tsen C.-J; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 3 | ||
2021 | Highly Stacked 8 Ge0.9Sn0.1 Nanosheet pFETs with Ultrathin Bodies (3nm) and Thick Bodies ((30nm) Featuring the Respective Record ION/IOFF of 1.4x107 and Record ION of 92?A at VOV=VDS=-0.5V by CVD Epitaxy and Dry Etching | Tsai C.-E; Liu Y.-C; Tu C.-T; Huang B.-W; Jan S.-R; Chen Y.-R; Chen J.-Y; Chueh S.-J; Cheng C.-Y; Tsen C.-J; Ma Y; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 8 | 0 | |
2021 | Highly Stacked GeSi Nanosheets and Nanowires by Lowerature Epitaxy and Wet Etching | Liu Y.-C; Tu C.-T; Tsai C.-E; Huang B.-W; Cheng C.-Y; Chueh S.-J; Chen J.-Y; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
2022 | Highly Stacked GeSn Nanosheets by CVD Epitaxy and Highly Selective Isotropic Dry Etching | Huang B.-W; Tsai C.-E; Liu Y.-C; Tu C.-T; Hsieh W.-H; Jan S.-R; Chen Y.-R; Chueh S.-J; Cheng C.-Y; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 3 | 3 | |
2020 | A Millimeter-Wave Dual-Band Class-F Power Amplifier in 90 nm CMOS | Huang Z.-J; Fu Z.-H; Huang B.-W; Lin Y.-T; Kao K.-Y; KUN-YOU LIN | 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020 | 1 | 0 | |
2021 | RF Performance of Stacked Si Nanosheet nFETs | Lin H.-C; Chou T; Chung C.-C; Tsen C.-J; Huang B.-W; CHEE-WEE LIU | IEEE Transactions on Electron Devices |