公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2013 | Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers | Lee, C.-W.; Hwu, J.-G.; JENN-GWO HWU | AIP Advances | 3 | 3 | |
1998 | Rapid thermal postoxidation anneal engineering in thin gate oxides with al gates | Chen, C.-Y.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 7 | 6 | |
2002 | Reduction in leakage current of low-temperature thin-gate oxide by repeated spike oxidation technique | Hong, C.-C.; Chang, C.-Y.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 4 | 3 | |
1986 | Relationship between mobile charges and interface trap states in silicon mos capacitors | Hwu, J.-G.; Wang, W.-S.; Chiou, Y.-L.; JENN-GWO HWU | Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an | 0 | 0 | |
1996 | Reliable fluorinated thin gate oxides prepared by liquid phase deposition following rapid thermal process | Lu, W.-S.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 11 | 9 | |
2014 | Role of lateral diffusion current in perimeter-dependent current of MOS(p) tunneling temperature sensors | Lin, Y.-K.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 14 | 13 | |
1992 | Role of stress in irradiation-then-anneal technique used for improving radiation hardness of metal-insulator-semiconductor devices | Shu, K.; Liao, C.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics Letters | 13 | 12 | |
2014 | Roles of interface and oxide trap density in the kinked current behavior of Al/SiO2/Si(p) structures with ultra-thin oxides | Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics A: Materials Science and Processing | 11 | 13 | |
2013 | Sensitivity enhancement of metal-oxide-semiconductor tunneling photodiode with trapped electrons in ultra-thin SiO2 layer | Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 3 | 0 | |
2008 | Shallow level trap formation in SiO2 induced by high field and thermal stresses | Lin, H.-P.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 2 | 1 | |
2010 | Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure | Chen, C.-H.; Hwu, J.-G.; JENN-GWO HWU | Microelectronic Engineering | 3 | 3 | |
1999 | The effect of patterned susceptor on the thickness uniformity of rapid thermal oxides | Lee, K.-C.; Chang, H.-Y.; Chang, H.; Hwu, J.-G.; Wung, T.-S.; JENN-GWO HWU | IEEE Transactions on Semiconductor Manufacturing | 12 | 10 | |
1986 | The effect of postoxidation cooling in oxygen on the interface property of MOS capacitors | Hwu, J.-G.; Chang, J.-J.; Wang, W.-S.; JENN-GWO HWU | International Journal of Electronics | 1 | 1 | |
1988 | The radiation hardness property of dry oxide grown by postoxidation cooling in oxygen ambient | Hwu, J.-G.; Fu, S.-L.; JENN-GWO HWU | Applied Physics A Solids and Surfaces | 8 | 8 | |
2009 | Thin silicon oxide films on N-type 4H-SiC prepared by scanning frequency anodization method | Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU | Microelectronic Engineering | 4 | 2 | |
1996 | Thin-gate oxides prepared by pure water anodization followed by rapid thermal densification | Jeog, M.-J.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 25 | 23 | |
2009 | Trapping characteristics of Al2O3/HfO 2/SiO1-2 stack structure prepared by low temperature in situ oxidation in dc sputtering | Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 20 | 19 | |
2010 | Trench structure metal- oxide-semiconductor (MOS) solar cells with oxides prepared by anodization technique | Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | 15th OptoElectronics and Communications Conference, OECC2010 | | | |
2011 | Two-state current conduction in high-k/SiO2 stacked dielectric with high bandgap 4H-SiC substrate | Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
2002 | Ultralow leakage characteristics of ultrathin gate oxides (∼3 nm) prepared by anodization followed by high-temperature annealing | Ting, C.-C.; Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 25 | 23 | |