公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1999 | Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation | Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Sergent, AM; MINGHWEI HONG | Science | 404 | 390 | |
2015 | Epitaxial ferromagnetic Fe3Si on GaAs (111) A with atomically smooth surface and interface | Liu, YC; Chen, YW; Tseng, SC; Chang, MT; Lo, SC; Lin, YH; Cheng, CK; Hung, HY; Hsu, CH; Kwo, J; others; MINGHWEI HONG | Applied Physics Letters | | | |
1987 | Epitaxial Films of High T c Oxide Superconductors Y 1 Ba 2 Cu 3 O 7 Grown on SrTiO 3 by Molecular Beam Epitaxy | Kwo, J; Hsieh, TC; Hong, M; Fleming, RM; Liou, SH; Davidson, BA; MINGHWEI HONG | MRS Proceedings | | | |
1988 | Epitaxial films of high T/sub c/oxide superconductors Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7/grown on SrTiO/sub 3/by molecular beam epitaxy | Kwo, J; Hsieh, TC; Hong, M; Fleming, RM; Liou, SH; Davidson, BA; MINGHWEI HONG | High-temperature superconductors | | | |
2004 | Epitaxial Growth and Structure of Thin Single Crystal $γ$-Al 2 O 3 Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High Vacuum | Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Wu, SY; MINGHWEI HONG | MRS Proceedings | | | |
2011 | Epitaxial stabilization of a monoclinic phase in Y 2 O 3 films on c-plane GaN | Chang, WH; Chang, P; Lee, WC; Lai, TY; Kwo, J; Hsu, C-H; Hong, JM; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
1987 | Evidence for weak link and anisotropy limitations on the transport critical current in bulk polycrystalline Y1Ba2Cu3Ox | Ekin, JW; Braginski, Alex; er I; Panson, AJ; Janocko, MA; Capone II, DW; Zaluzec, NJ; Fl; ermeyer, B; De Lima, OF; Hong, M; Kwo, J; others; MINGHWEI HONG | Journal of Applied Physics | | | |
2000 | Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd̃ 2Õ 3 on GaAs (001) | Nelson, EJ; Woicik, JC; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Applied Physics Letters | | | |
2013 | Ferromagnetism in cluster free, transition metal doped high $κ$ dilute magnetic oxides: Films and nanocrystals | Wu, CN; Wu, TS; Huang, SY; Lee, WC; Chang, YH; Soo, YL; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Applied Physics | | | |
2000 | First demonstration of GaAs CMOS | Hong, M; Baillargeon, JN; Kwo, J; Mannaerts, JP; Cho, AY; MINGHWEI HONG | 2000 IEEE International Symposium on Compound Semiconductors | 14 | | |
2006 | Flicker noise characteristics in GaAs MOSFETs | Chan, CY; Tsai, PJ; Lee, TC; Hsu, Shawn SH; Kwo, J; Hong, M; MINGHWEI HONG | MBE conference 2006 | | | |
2004 | Fundamental Study and Oxide Reliability of the MBE-Grown Ga 2- x Gd x O 3 Dielectric Oxide for Compound Semiconductor MOSFETs | Kwo, J; Hong, M; Mannaerts, JP; Lee, YJ; Wu, YD; Lee, WG; Milkap, S; Yang, B; Gustaffson, T; MINGHWEI HONG | MRS Proceedings | | | |
1999 | Ga 2 O 3 (Gd 2 O 3)/GaAs power MOSFETs | Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Tsai, HS; Kwo, J; Krajewski, JJ; Chen, YK; Cho, AY; MINGHWEI HONG | Electronics Letters | | | |
1998 | Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Kuo, JM; Hong, M; Hobson, WS; Lothian, JR; Lin, J; Tsai, HS; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG | Electron Device Letters, IEEE | | | |
2007 | Ga 2 O 3 „Gd 2 O 3…/Si 3 N 4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion | Zheng, JF; Tsai, W; Lin, TD; Lee, YJ; Chen, CP; Hong, M; Kwo, J; Cui, S; Ma, TP; MINGHWEI HONG | Applied Physics Letters | | | |
1998 | Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs | Hong, M; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others; MINGHWEI HONG | 28th State-of-the-Art Program on Compound Semiconductors | | | |
2009 | Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices | Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2003 | GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL; Mannaerts, JP; Hong, M; Ng, KK; others; MINGHWEI HONG | Applied Physics Letters | 311 | 280 | |
2003 | GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG | Electron Device Letters, IEEE | 227 | 193 | |
2001 | GaAs MOSFET-Materials Physics and Devices | Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wang, YC; Lay, TS; MINGHWEI HONG | APPC 2000 | | | |