公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2012 | In-situ MBE and ALD deposited HfO2 on In0. 53Ga0. 47As | Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG | APS Meeting Abstracts | | | |
2012 | In-situ photoemission analyses of ALD-oxide/InxGa1-xAs (001) interfaces | Huang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W; Hong, M; Kwo, J; MINGHWEI HONG | APS Meeting Abstracts | | | |
2010 | InGaAs and Ge MOSFETs with a common high $κ$ gate dielectric | Lee, WC; Lin, TD; Chu, LK; Chang, P; Chang, YC; Chu, RL; Chiu, HC; Lin, CA; Chang, WH; Chiang, TH; others; MINGHWEI HONG | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology | | | |
2011 | InGaAs and Ge MOSFETs with high $κ$ dielectrics | Lee, WC; Chang, P; Lin, TD; Chu, LK; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG | Microelectronic Engineering | | | |
2009 | InGaAs Metal Oxide Semiconductor Devices with Ga 2 O 3 (Gd 2 O 3) High-$κ$ Dielectrics for Science and Technology beyond Si CMOS | Hong, M; Kwo, J; Lin, TD; Huang, ML; MINGHWEI HONG | MRS bulletin | | | |
2009 | InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3 (Gd2O3) as a gate dielectric | Lin, TD; Chiu, HC; Chang, P; Lee, WC; Chiang, TH; Kwo, JR; Tsai, W; Hong, M; MINGHWEI HONG | ECS Transactions | | | |
2007 | InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation | Chang, YC; Huang, ML; Lee, YJ; Lee, KY; Lin, TD; Hong, M; Kwo, J; Liao, CC; Cheng, KY; Lay, TS; MINGHWEI HONG | 2007 International Semiconductor Device Research Symposium | | | |
2010 | InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS | Hong, M; Kwo, J; Lin, TD; Huang, ML; Lee, WC; Chang, P; MINGHWEI HONG | Fundamentals of III-V Semiconductor MOSFETs | 1 | 4 | |
2006 | Interfacial self-cleaning in atomic layer deposition of HfO 2 gate dielectric on In 0.15 Ga 0.85 As | Chang, CH; Chiou, YK; Chang, YC; Lee, KY; Lin, TD; Wu, TB; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics Letters | | | |
2008 | Interfacial-layers-free Ga2O3 (Gd2O3)/Ge MOS Diodes | Lee, CH; Lin, TD; Lee, KY; Huang, ML; Tung, LT; Hong, M; Kwo, J; MINGHWEI HONG | APS Meeting Abstracts | | | |
2014 | (Invited) High $κ$/InGaAs for Ultimate CMOS-Interfacial Passivation, Low Ohmic Contacts, and Device Performance | Chang, WH; Lin, TD; Liao, Min-Han; Pi, TW; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | ECS Transactions | | | |
2011 | Low interfacial density of states around midgap in MBE-Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As | Lin, CA; Chiu, HC; Chiang, TH; Chang, YC; Lin, TD; Kwo, J; Wang, W-E; Dekoster, J; Heyns, M; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2007 | MBE and ALD grown High k Dielectrics Gate Stacks on GaN | Chang, YC; Lee, KY; Lee, WC; Lin, TD; Lee, YJ; Huang, ML; Hong, M; Kwo, J; Wang, YH; MINGHWEI HONG | APS Meeting Abstracts | | | |
2007 | MBE grown high-quality Gd 2 O 3/Si (111) hetero-structure | Lin, TD; Hang, MC; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2011 | MBE—Enabling technology beyond Si CMOS | Chang, P; Lee, WC; Lin, TD; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2009 | Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3) on Ge (100) | Chu, LK; Lin, TD; Lee, CH; Tung, LT; Lee, WC; Chu, RL; Chang, CC; Hong, Mingyi; Kwo, J; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
2008 | Molecular beam epitaxy grown Ga2O3 (Gd2O3) high kappa dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics | Lee, CH; Lin, TD; Tung, LT; Huang, ML; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2009 | Molecular beam epitaxy-grown Al 2 O 3/HfO 2 high-$κ$ dielectrics for germanium | Lee, WC; Chin, BH; Chu, LK; Lin, TD; Lee, YJ; Tung, LT; Lee, CH; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Crystal Growth | | | |
2007 | MOS Ge Diodes Based on High kappa Gate Dielectrics Grown by MBE and ALD | Lee, Kun Yu; Lee, WC; Lin, TD; Lee, CS; Chang, YC; Lee, YJ; Huang, ML; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG | APS Meeting Abstracts | | | |
2009 | Nano-electronics of high $κ$ dielectrics on InGaAs for key technologies beyond Si CMOS | Lin, TD; Chang, P; Chiu, HC; Chang, YC; Lin, CA; Chang, WH; Lee, YJ; Chang, YH; Huang, ML; Kwo, J; others; MINGHWEI HONG | 2009 IEEE International Conference on Indium Phosphide & Related Materials | | | |