公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2009 | Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y 2 O 3 on Ge | Chu, LK; Lee, WC; Huang, ML; Chang, YH; Tung, LT; Chang, CC; Lee, YJ; Kwo, J; MINGHWEI HONG | Journal of Crystal Growth | | | |
2009 | Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3) on Ge (100) | Chu, LK; Lin, TD; Lee, CH; Tung, LT; Lee, WC; Chu, RL; Chang, CC; MINGHWEI HONG ; Kwo, J | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
2008 | Molecular beam epitaxy grown Ga2O3 (Gd2O3) high kappa dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics | Lee, CH; Lin, TD; Tung, LT; Huang, ML; MINGHWEI HONG ; Kwo, J | Journal of Vacuum Science & Technology B | | | |
2009 | Molecular beam epitaxy-grown Al 2 O 3/HfO 2 high-$κ$ dielectrics for germanium | Lee, WC; Chin, BH; Chu, LK; Lin, TD; Lee, YJ; Tung, LT; Lee, CH; MINGHWEI HONG ; Kwo, J | Journal of Crystal Growth | | | |
2008 | Oxide scalability in Al [sub 2] O [sub 3]/Ga [sub 2] O [sub 3](Gd [sub 2] O [sub 3])/In [sub 0.20] Ga [sub 0.80] As/GaAs heterostructures | Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; MINGHWEI HONG ; Kwo, J; Tsai, W | Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures | | | |
2008 | Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures | Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; MINGHWEI HONG ; Kwo, J; Tsai, W | Journal of Vacuum Science & Technology B | | | |