公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | High-quality A-plane GaN with Modulation-flow Growth | Huang, Jeng-Jie; Tang, Tsung-Yi; Huang, Chi-Feng; Yang, C. C. | J. Crystal Growth | | | |
2008 | Improved a-plane GaN quality grown with flow modulation epitaxy and epitaxial lateral overgrowth on r-plane sapphire substrate | CHIH-CHUNG YANG ; Huang, Jeng-Jie; Shen, Kun-Ching; Shiao, Wen-Yu; Chen, Yung-Sheng; Liu, Tzu-Chi; Tang, Tsung-Yi; Huang, Chi-Feng; CHIH-CHUNG YANG | Applied Physics Letters | | | |
2003 | Indium aggregated quantum dot structures in InGaN compounds | Yang, C.C.; Feng, Shih-Wei; Cheng, Yung-Chen; Chung, Yi-Yin; Lin, En-Chiang; Wang, Hsiang-Chen; Tang, Tsung-Yi; Deng, Chih-Chung; Lin, Si-Jiung; Ma, Kung-Jen; Lin, Yen-Sheng | Optoelectronics | | | |
2007 | Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells | Huang, Chi-Feng; Tang, Tsung-Yi; Huang, Jeng-Jie; Yang, C. C. | Applied Physics Letters (SCI) | | | |
2006 | Prestrained effect on the emission properties of InGaN/GaN quantum-well structures | Huang, Chi-Feng; Tang, Tsung-Yi; Huang, Jeng-Jie; Shiao, Wen-Yu; Yang, C. C.; Hsu, Chih-Wei; Chen, L. C. | Applied Physics Letters | | | |
2006 | Strain relaxation and quantum confinement in InGaN/GaN nanoposts | Chen, Horng-Shyang; Yeh, Dong-Ming; Lu, Yen-Cheng; Chen, Cheng-Yen; Huang, Chi-Feng; Tang, Tsung-Yi; Yang, C.C.; Wu, Cen-Shawn; Chen, Chii-Dong | Nanotechnology 17, 1454–1458 | | | |
2007 | Surface Plasmon Leakage in Its Coupling with an InGaN/GaN Quantum Well through an Ohmic Contact | Yeh, Dong-Ming; Huang, Chi-Feng; Lu, Yen-Cheng; Chen, Cheng-Yen; Tang, Tsung-Yi; Huang, Jeng-Jie; Shen, Kun-Ching; Yang, Ying-Jay ; Yang, C. C. | Applied Physics Letters | | | |
2009 | 以有機金屬氣相沉積法從事氮化鎵奈米柱生長和接合再生長以及其特性研究 | 唐宗毅; Tang, Tsung-Yi | | | | |