Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2007 | A novel approach of using a MBE template for ALD growth of high-庥 dielectrics | Lee, K.Y.; Lee, W.C.; Huang, M.L.; Chang, C.H.; Lee, Y.J.; Chiu, Y.K.; Wu, T.B.; MINGHWEI HONG ; Kwo, R. | Journal of Crystal Growth | | | |
2008 | Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO<inf>2</inf> on In<inf>0.53</inf>Ga<inf>0.47</inf>As | Lee, K.Y.; Lee, Y.J.; Chang, P.; Huang, M.L.; Chang, Y.C.; MINGHWEI HONG ; Kwo, J. | Applied Physics Letters | 47 | 40 | |
2008 | Achieving a low interfacial density of states in atomic layer deposited Al<inf>2</inf> O<inf>3</inf> on In<inf>0.53</inf> Ga<inf>0.47</inf> As | Chiu, H.C.; Tung, L.T.; Chang, Y.H.; Lee, Y.J.; Chang, C.C.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | | | |
2012 | Advanced metal-gate/high-κ CMOS with small EOT and better high field mobility | CHIEH-HSIUNG KUAN ; Chin, A.; Chen, W.B.; Chen, P.C.; Wu, Y.H.; Chi, C.C.; Lee, Y.J.; Chang-Liao, K.S.; CHIEH-HSIUNG KUAN | ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology | | | |
2009 | Advances on III-V MOSFET for science and technology beyond Si CMOS | Kwo, J.; Lin, T.D.; Huang, M.L.; Chang, P.; Lee, Y.J.; MINGHWEI HONG | ECS Transactions | 1 | 0 | |
2010 | Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) passivation on In<inf>0.20</inf>Ga <inf>0.80</inf>As/GaAs - Structural intactness with high-temperature annealing | Lee, Y.J.; Lee, C.H.; Tung, L.T.; Chiang, T.H.; Lai, T.Y.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG | Journal of Physics D: Applied Physics | | | |
2011 | Atomic-layer-deposited Al<inf>2</inf>O<inf>3</inf> and HfO<inf>2</inf> on GaN: A comparative study on interfaces and electrical characteristics | Chang, Y.C.; Huang, M.L.; Chang, Y.H.; Lee, Y.J.; Chiu, H.C.; Kwo, J.; MINGHWEI HONG | Microelectronic Engineering | | | |
2008 | Atomic-layer-deposited Hf O2 on In0.53 Ga0.47 As: Passivation and energy-band parameters | Chang, Y.C.; Huang, M.L.; Lee, K.Y.; Lee, Y.J.; Lin, T.D.; MINGHWEI HONG ; Kwo, J.; Lay, T.S.; Liao, C.C.; Cheng, K.Y. | Applied Physics Letters | 117 | 101 | |
2007 | Cubic HfO<inf>2</inf> doped with y<inf>2</inf>O<inf>2</inf> epitaxial films on GaAs (001) of enhanced dielectric constant | Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; MINGHWEI HONG ; Hsu, C.-H.; Kwo, J. | Applied Physics Letters | | | |
2007 | Defining new frontiers in electronic devices with high 庥 dielectrics and interfacial engineering | MINGHWEI HONG ; Lee, W.C.; Huang, M.L.; Chang, Y.C.; Lin, T.D.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, H.Y. | Thin Solid Films | | | |
2009 | Domain matching epitaxial growth of high-quality ZnO film using a Y <inf>2</inf>O<inf>3</inf> buffer layer on Si (111) | Liu, W.-R.; Li, Y.-H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; Lee, Y.J.; MINGHWEI HONG ; Kwo, J. | Crystal Growth and Design | | | |
2010 | Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers | Chu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; MINGHWEI HONG | Solid-State Electronics | | | |
2010 | Engineering of threshold voltages in molecular beam epitaxy-grown Al <inf>2</inf> O<inf>3</inf> / Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O <inf>3</inf>) / In<inf>0.2</inf> Ga<inf>0.8</inf> As | Wu, Y.D.; Lin, T.D.; Chiang, T.H.; Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; MINGHWEI HONG ; Lin, C.A.; Kwo, J. | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | | | |
2007 | Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion | Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; MINGHWEI HONG ; Kwo, J.; Cui, S.; Ma, T.P. | Applied Physics Letters | | | |
2009 | GaN on Si with nm-thick single-crystal Sc<inf>2</inf>O<inf>3</inf> as a template using molecular beam epitaxy | Lee, W.C.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, C.H.; Wu, S.Y.; Ng, H.M.; MINGHWEI HONG | Journal of Crystal Growth | | | |
2008 | Growth and structural characteristics of GaN/AIN/nanothick 帠-Al <inf>2</inf>O<inf>3</inf>/Si(111) | Lee, W.C.; Lee, Y.J.; Tung, L.T.; Wu, S.Y.; Lee, C.H.; MINGHWEI HONG ; Ng, H.M.; Kwo, J.; Hsu, C.H. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2009 | High 庥 dielectric single-crystal monoclinic Gd<inf>2</inf>O<inf>3</inf> on GaN with excellent thermal, structural, and electrical properties | Chang, W.H.; Lee, C.H.; Chang, P.; Chang, Y.C.; Lee, Y.J.; Kwo, J.; Tsai, C.C.; Hong, J.M.; Hsu, C.-H.; MINGHWEI HONG | Journal of Crystal Growth | 49 | 50 | |
2008 | High-quality nanothick single-crystal Y2 O3 films epitaxially grown on Si (111): Growth and structural characteristics | Lee, Y.J.; Lee, W.C.; Nieh, C.W.; Yang, Z.K.; Kortan, A.R.; MINGHWEI HONG ; Kwo, J.; Hsu, C.-H. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
1994 | A hydraulic absorber for wideband vibration reduction in ship hulls | Hsueh, W.J.; Lee, Y.J.; WEN-JENG HSUEH | Journal of Offshore Mechanics and Arctic Engineering | | | |
2008 | Inelastic electron tunneling spectroscopy study of metal-oxide- semiconductor diodes based on high-庥 gate dielectrics | You, S.L.; Huang, C.C.; Wang, C.J.; Ho, H.C.; Kwo, J.; Lee, W.C.; Lee, K.Y.; Wu, Y.D.; Lee, Y.J.; MINGHWEI HONG | Applied Physics Letters | | | |