公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2003 | Growth and Electrical Characteristics of Liquid-Phase Deposited SiO2 on Ge | Hsu, B.-C.; Hua, W.-C.; Shie, C.-R.; Chen, K.-F.; Liu, C. W. | Electrochemical and Solid State Letters | | | |
2003 | Growth and electrical characteristics of liquid-phase deposited SiO<inf>2</inf> on Ge | CHEE-WEE LIU ; Hsu, B.-C.; Hua, W.-C.; Shie, C.-R.; Chen, K.-F.; CHEE-WEE LIU | Electrochemical and Solid-State Letters | | | |
2002 | High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity | CHEE-WEE LIU ; Hsu, B.-C.; Chang, S.T.; Shie, C.-R.; Lai, C.-C.; Chen, P.S.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
2001 | Oxide roughness enhanced reliability of MOS tunneling diodes | CHEE-WEE LIU ; Lin, C.-H.; Lee, M.H.; Hsu, B.-C.; Chen, K.-F.; Shie, C.-R.; CHEE-WEE LIU | 2001 International Semiconductor Device Research Symposium, ISDRS 2001 | | | |
2002 | Roughness- Enhanced Reliability of MOS Tunneling Diodes | Lin, C.-H.; Yuan, F.; Shie, C.-R.; Chen, K.-F.; Hsu, B.-C.; Lee, M.H.; Pai, W.W.; Liu, C.W. | IEEE Electron Device Letters | | | |
2002 | Roughness-enhanced reliability of MOS tunneling diodes | Lin, C.-H.; Yuan, F.; Shie, C.-R.; Chen, K.-F.; Hsu, B.-C.; Lee, M.H.; Pai, W.W. ; CHEE-WEE LIU | IEEE Electron Device Letters | 6 | 7 | |
2003 | Strain-induced growth of SiO2 dots by liquid phase deposition | Liu, C. W.; Hsu, B.-C.; Chen, K.-F.; Lee, M. H.; Shie, C.-R.; Chen, Pang-Shiu; LiuCW | Applied Physics Letters | | | |
2003 | Strain-induced growth of SiO<inf>2</inf> dots by liquid phase deposition | CHEE-WEE LIU ; Liu, C.W.; Hsu, B.-C.; Chen, K.-F.; Lee, M.H.; Shie, C.-R.; Chen, P.-S.; CHEE-WEE LIU | Applied Physics Letters | | | |