https://scholars.lib.ntu.edu.tw/handle/123456789/147637
標題: | An Analysis of the Anomalous Dip in Scattering Parameter of InGaP–GaAs Heterojunction Bipolar Transistors (HBTs) | 作者: | Tu, Hsing-Yuan Lin, Yo-Sheng Chen, Ping-Yu Lu, Shey-Shi Pan, Hsuan-Yu |
關鍵字: | HBT;InGaP;kink phenomenon;scattering parameter | 公開日期: | 十月-2002 | 出版社: | Taipei:National Taiwan University Dept Elect Engn | 卷: | VOL. 49 | 期: | NO. 10 | 起(迄)頁: | - | 來源出版物: | IEEE TRANSACTIONS ON ELECTRON DEVICES | 摘要: | The kink phenomenon in scattering parameter of InGaP–GaAs heterojunction bipolar transistors (HBTs) was explained quantitatively for the first time. Our results show that the output impedance of InGaP–GaAs HBTs can be represented by a simple series resistance–capacitance ( – ) circuit at low frequencies and a simple parallel – circuit at high frequencies very accurately because of the high output resistance of HBTs. The behavior of of HBTs is in contrast with that of field effect transistors (FETs), where the smaller drain–source output resistance obscures the ambivalent characteristics. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/200611150121219 | 其他識別: | 246246/200611150121219 |
顯示於: | 電機工程學系 |
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