https://scholars.lib.ntu.edu.tw/handle/123456789/147640
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor | National Taiwan University Dept Elect Engn | en |
dc.contributor.author | Hang, D.R. | en |
dc.contributor.author | Huang, C.F. | en |
dc.contributor.author | Hung, W.K. | en |
dc.contributor.author | Chang, Y.H. | en |
dc.contributor.author | Chen, J.C. | en |
dc.contributor.author | Yang, H.C. | en |
dc.contributor.author | Chen, Y.F. | en |
dc.contributor.author | Shih, D.K. | en |
dc.contributor.author | Chu, T.Y. | en |
dc.contributor.author | Lin, H.H. | en |
dc.creator | Hang, D.R.; Huang, C.F.; Hung, W.K.; Chang, Y.H.; Chen, J.C.; Yang, H.C.; Chen, Y.F.; Shih, D.K.; Chu, T.Y.; Lin, H.H. | en |
dc.date | 2002 | - |
dc.date.accessioned | 2006-11-14T18:23:43Z | - |
dc.date.accessioned | 2018-07-06T09:35:33Z | - |
dc.date.available | 2006-11-14T18:23:43Z | - |
dc.date.available | 2018-07-06T09:35:33Z | - |
dc.date.issued | 2002 | - |
dc.identifier | 246246/2006111501211829 | zh_TW |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/2006111501211829 | - |
dc.description.abstract | We present the first investigation of Shubnikov–de Haas (SdH) oscillations of two-dimensional electron gas formed in an InAsN/InGaAs single quantum well (QW) grown on an InP substrate using gas source molecular beam epitaxy and a radio-frequency (rf ) plasma nitrogen source. The photoluminescence (PL) peak energy of the InAsN/InGaAs QW decreases compared with that of InAs/InGaAs QW. This agrees with the bowing effect due to the incorporation of nitrogen atoms. The nitrogen content can be estimated to be 0.4% using the PL peak positions as well as x-ray diffraction. From the SdH oscillations, the carrier concentration is 2.85 × 1011 cm−2 and the effective mass is 0.1±0.01m0. The enhancement of the effective mass is mainly due to the incorporation of the nitrogen atoms in the InAs lattice, which is consistent with a recent study on InAsN bulk alloys. The large increase of the effective mass cannot be explained by the simple band anticrossing model. In addition, we observe a temperatureindependent magnetoresistivity at a critical magnetic field. Our analysis supports the fact that the value of the critical exponent in the quantum Hall effect is not universal. | en |
dc.format | application/pdf | zh_TW |
dc.format.extent | 183862 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | en-US | zh_TW |
dc.language.iso | zh_TW | - |
dc.publisher | Taipei:National Taiwan University Dept Elect Engn | en |
dc.relation | INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond. Sci. Technol. 17 (2002) 999–1003 | en |
dc.relation.ispartof | INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond. Sci. Technol | - |
dc.source | http://www.iop.org/ | en |
dc.title | Shubnikov–de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well | en |
dc.type | journal article | en |
dc.relation.pages | - | - |
dc.relation.journalvolume | 17 | - |
dc.relation.journalissue | 2002 | - |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/2006111501211829/1/8126.pdf | - |
item.fulltext | with fulltext | - |
item.openairetype | journal article | - |
item.languageiso639-1 | zh_TW | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | open | - |
item.cerifentitytype | Publications | - |
顯示於: | 電機工程學系 |
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