https://scholars.lib.ntu.edu.tw/handle/123456789/148089
標題: | (AlxGa1 x)0:5In0:5P/In0:15Ga0:85As (x = 0; 0:3; 1:0) Heterostructure Doped-Channel FETs for Microwave Power Applications | 作者: | Yang, Shih-Cheng Chiu, Hsien-Chin Chan, Yi-Jen Lin, Hao-Hsiung Kuo, Jenn-Ming |
關鍵字: | AlGaInP;doped-channel FET;rf power performance | 公開日期: | 十二月-2001 | 出版社: | Taipei:National Taiwan University Dept Mech Engn | 卷: | VOL. 48 | 期: | NO. 12 | 起(迄)頁: | - | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | The quaternary (Al Ga1 )0 5In0 5P (0 1) compounds on GaAs substrates are important materials used as a Schottky layer in microwave devices. In this report, we systematically investigated the electrical properties of quaternary (Al Ga1 )0 5In0 5P materials and concluded that the best composition for improving the device performance is by substituting 30% ( = 03) of Ga atoms for Al atoms in GaInP material. The Schottky barrier heights ( ) of (Al Ga1 )0 5In0 5P layers were 0 85 1 00 eV. We successfully realized the (Al Ga1 )0 5In0 5P/In0 15Ga0 85As ( = 00 3 1 0) doped-channel FETs (DCFETs) and demonstrated excellent dc, microwave, and power characteristics. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/200611150121214 | 其他識別: | 246246/200611150121214 |
顯示於: | 電機工程學系 |
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