https://scholars.lib.ntu.edu.tw/handle/123456789/154334
標題: | Photoreflectance Study of Surface Fermi Level in Molecular Beam Epitaxial Grown InAlAs Heterostructures | 作者: | Hwang, J. S. Tyan, S. L. Chou, W. Y. Lee, M. L. Weybume, D. Hang, Z. Lee, T. L. Lin, Hao-Hsiung |
公開日期: | 1994 | 卷: | v.64 | 起(迄)頁: | 3314-3316 | 來源出版物: | Applied Physics Letters | 摘要: | We have studied the band gaps and the surface Fermi level positions of a series of In1-xAlxAs surface-intrinsic-n+ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028444199&doi=10.1063%2f1.111294&partnerID=40&md5=c5807e3682964f22bfc0e9d36e302418 | DOI: | 10.1063/1.111294 | SDG/關鍵字: | Aluminum; Calculations; Composition effects; Curve fitting; Electric fields; Electron energy levels; Energy gap; Molecular beam epitaxy; Oscillations; Franz Keldysh oscillations; Photoreflectance; Schottky barrier; Surface Fermi level; Surface intrinsic structures; Semiconducting indium compounds |
顯示於: | 電機工程學系 |
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