https://scholars.lib.ntu.edu.tw/handle/123456789/154437
Title: | The Characteristics of Si-Doped GaAs Epilayers Grown by Metal Organic Chemical Vapor Deposition (MOCVD) Using Silane Source | Authors: | 劉志文 Chen, S. L. Lay, J. P. 李嗣涔 林浩雄 Lin, Hao-Hsiung |
Issue Date: | 1988 | Journal Volume: | v.51 | Start page/Pages: | 1634-1636 | Source: | Applied Physics Letters | URI: | http://ntur.lib.ntu.edu.tw//handle/246246/120939 |
Appears in Collections: | 電機工程學系 |
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