https://scholars.lib.ntu.edu.tw/handle/123456789/309169
標題: | Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells | 作者: | Lin, Ching-Fuh Su, Y.-S. CHAO-HSIN WU Shmavonyan, G.S. |
關鍵字: | Carrier transport; Emission spectrum; Nonuniform carrier distribution; Semiconductor optical amplifier (SOA); Separate confinement heterostructure (SCH); Superluminescent diode (SLD) | 公開日期: | 2004 | 卷: | 16 | 期: | 6 | 起(迄)頁: | 1441-1443 | 來源出版物: | IEEE Photonics Technology Letters | 摘要: | Experiments show that the layer of separate confinement heterostructure (SCH) has a significant influence on the emission spectrum of superluminescent diodes (SLDs)/semiconductor optical amplifiers (SOAs). Reducing the thickness of SCH layer at the p-side could improve the uniformity of carrier distribution among multiple quantum wells (MQWs). With three In0.67Ga0.33As0.72P0.28 QWs near the p-side and two In0.53Ga0.47As QWs near the n-side, when the thickness of the SCH layer changes from 120 to 30 nm, the operation current for SLDs/SOAs to exhibit the full-width at half-maximum spectral width of above 270 nm could be reduced from 500 to 160 mA. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-2942702357&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/309169 https://www.scopus.com/inward/record.uri?eid=2-s2.0-2942702357&doi=10.1109%2fLPT.2004.827119&partnerID=40&md5=47480359eef9edb75f902f983902a1e0 |
ISSN: | 10411135 | DOI: | 10.1109/LPT.2004.827119 | SDG/關鍵字: | Bandwidth; Carrier mobility; Heterojunctions; Light emission; Luminescence; Semiconducting indium compounds; Semiconductor lasers; Semiconductor quantum wells; Spectrum analysis; Carrier transport; Emission bandwidth; Emission spectrum; Nonidentical multiple quantum wells; Nonuniform carrier distribution; Semiconductor optical amplifiers; Superluminescent diodes; Light amplifiers |
顯示於: | 電機工程學系 |
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